Structural and Optical Properties of Alternately-Strained ZnS_{x}Se_{1-x}/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV

• Authors: E. Evropeytsev , S. Sorokin , S. Gronin , I. Sedova , G. Klimko , A. Sitnikova , M. Baidakova , S. Ivanov , A. Toropov
• Languages of publication: EN

Abstracts

EN

We report on design and fabrication of alternately-strained ZnS_xSe_{1-x}/CdSe short period superlattices with the effective band-gap 2.52, 2.58, and 2.61 eV and the total thickness ≈300 nm. Transmission electron microscopy, X-ray diffraction, and photoluminescence measurements reveal negligibly small density of misfit dislocations in the superlattices. The investigation of carrier transport along the superlattice growth axis, performed by the photoluminescence measurements of a superlattice with one enlarged quantum well, confirms efficient Bloch-type transport at temperatures above ≈ 100 K. Such superlattices look promising for the applications as a material for the wide band-gap photoactive region of a multi-junction solar cell comprising both III-V and II-VI materials.

Keywords

EN

78.67.Pt; 81.07.-b; 78.55.-m

Discipline

• 78.67.Pt: Multilayers; superlattices; photonic structures; metamaterials(see also 81.05.Xj, Metamaterials for chiral, bianisotropic and other complex media)
• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1156-1158

Dates

published

2014-11

Contributors

author

E. Evropeytsev

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

author

S. Sorokin

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

author

S. Gronin

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

author

I. Sedova

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

author

G. Klimko

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

author

A. Sitnikova

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

author

M. Baidakova

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

author

S. Ivanov

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

author

A. Toropov

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

References

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Identifiers

DOI

10.12693/APhysPolA.126.1156