Journal
Article title
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Abstracts
We report on design and fabrication of alternately-strained ZnS_xSe_{1-x}/CdSe short period superlattices with the effective band-gap 2.52, 2.58, and 2.61 eV and the total thickness ≈300 nm. Transmission electron microscopy, X-ray diffraction, and photoluminescence measurements reveal negligibly small density of misfit dislocations in the superlattices. The investigation of carrier transport along the superlattice growth axis, performed by the photoluminescence measurements of a superlattice with one enlarged quantum well, confirms efficient Bloch-type transport at temperatures above ≈ 100 K. Such superlattices look promising for the applications as a material for the wide band-gap photoactive region of a multi-junction solar cell comprising both III-V and II-VI materials.
Discipline
- 78.67.Pt: Multilayers; superlattices; photonic structures; metamaterials(see also 81.05.Xj, Metamaterials for chiral, bianisotropic and other complex media)
- 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)
- 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
Journal
Year
Volume
Issue
Pages
1156-1158
Physical description
Dates
published
2014-11
Contributors
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
author
- Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021, St. Petersburg, Russia
References
- [1] Y.H. Zhang, S.N. Wu, D. Ding, S.Q. Yu, S.R. Johnson, Proc. 33rd IEEE Photovoltaic Specialists Conference, San Diego (CA, USA), IEEE, 2008, p. 62, doi: 10.1109/PVSC.2008.4922555
- [2] M.A. Haase, J. Qiu, J.M. DePuydt, H. Cheng, Appl. Phys. Lett. 59, 1272 (1991), doi: 10.1063/1.105472
- [3] T.V. Shubina, S.V. Ivanov, A.A. Toropov, G.N. Aliev, M.G. Tkatchman, S.V. Sorokin, N.D. Il'inskaya, P.S. Kop'ev, J. Cryst. Growth 184/185, 596 (1998), doi: 10.1016/S0022-0248(98)80125-5
- [4] A. Chomette, B. Deveaud, J.Y. Emery, A. Regreny, B. Lambert, Solid State Commun. 54, 75 (1985), doi: 10.1016/0038-1098(85)91037-3
- [5] S.V. Ivanov, A.A. Toropov, T.V. Shubina, S.V. Sorokin, A.V. Lebedev, I.V. Sedova, P.S. Kop'ev, G.R. Pozina, J.P. Bergman, B. Monemar, J. Appl. Phys. 83, 3168 (1998), doi: 10.1063/1.367130
- [6] S.D. Baranovskii, R. Eichmann, P. Thomas, Phys. Rev. B 58, 13081 (1998), doi: 10.1103/PhysRevB.58.13081
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n530kz