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2014 | 126 | 5 | 1154-1155
Article title

Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells

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EN
Abstracts
EN
We theoretically study the polarization-induced band inversion phenomenon in c-plane In-rich InGaN/GaN quantum wells. Our calculations performed using the k·p method with the 8×8 Rashba-Sheka-Pikus Hamiltonian for the structures with the indium content between 90% and 100% show that the reordering of the conduction and valence bands occurs for the quantum well widths below the theoretical values of critical thickness for InGaN layers pseudomorphically grown on GaN substrates.
Keywords
EN
Publisher

Year
Volume
126
Issue
5
Pages
1154-1155
Physical description
Dates
published
2014-11
Contributors
author
  • Institute of High Pressure Physics - Unipress, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
  • Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warszawa, Poland
author
  • Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warszawa, Poland
References
  • [1] M.S. Miao, Q.M. Yan, C.G. Van de Walle, Appl. Phys. Lett. 102, 102103 (2013), doi: 10.1063/1.4794986
  • [2] M.S. Miao, Q.M. Yan, C.G. Van de Walle, W.K. Lou, L.L. Li, K. Chang, Phys. Rev. Lett. 109, 186803 (2012), doi: 10.1103/PhysRevLett.109.186803
  • [3] P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, M. Scheffler, Phys. Rev. B 77, 075202 (2008), doi: 10.1103/PhysRevB.77.075202
  • [4] J. Pal, G. Tse, V. Haxha, M.A. Migliorato, S. Tomic, Phys. Rev. B 84, 085211 (2011), doi: 10.1103/PhysRevB.84.085211
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n529kz
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