Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells

• Authors: S. Łepkowski , W. Bardyszewski , D. Rodak
• Languages of publication: EN

Abstracts

EN

We theoretically study the polarization-induced band inversion phenomenon in c-plane In-rich InGaN/GaN quantum wells. Our calculations performed using the k·p method with the 8×8 Rashba-Sheka-Pikus Hamiltonian for the structures with the indium content between 90% and 100% show that the reordering of the conduction and valence bands occurs for the quantum well widths below the theoretical values of critical thickness for InGaN layers pseudomorphically grown on GaN substrates.

Keywords

EN

73.21.Fg; 73.22.Dj

Discipline

• 73.22.Dj: Single particle states
• 73.21.Fg: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1154-1155

Dates

published

2014-11

Contributors

author

S. Łepkowski

• Institute of High Pressure Physics - Unipress, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland

author

W. Bardyszewski

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warszawa, Poland

author

D. Rodak

• Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warszawa, Poland

References

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• [4] J. Pal, G. Tse, V. Haxha, M.A. Migliorato, S. Tomic, Phys. Rev. B 84, 085211 (2011), doi: 10.1103/PhysRevB.84.085211

Identifiers

DOI

10.12693/APhysPolA.126.1154