AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency

• Authors: E. Shevchenko , A. Toropov , D. Nechaev , V. Jmerik , T. Shubina , S. Ivanov , M. Yagovkina , G. Pozina , J. Bergman , B. Monemar
• Languages of publication: EN

Abstracts

EN

We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick Al_{x}Ga_{1-x}N/Al_{x+0.1}Ga_{0.9-x}N quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.

Keywords

EN

78.67.De; 78.55.Cr; 71.35.-y; 78.66.-w

Discipline

• 78.55.Cr: III-V semiconductors
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 78.67.De: Quantum wells
• 71.35.-y: Excitons and related phenomena

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1140-1142

Dates

published

2014-11

Contributors

author

E. Shevchenko

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia

author

A. Toropov

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia

author

D. Nechaev

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia

author

V. Jmerik

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia

author

T. Shubina

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia

author

S. Ivanov

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia

author

M. Yagovkina

• Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia

author

G. Pozina

• Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden

author

J. Bergman

• Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden

author

B. Monemar

• Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden

References

• [1] T.D. Moustakas, Y. Liao, C.-K. Kao, C. Thomidis, A. Bhattacharyya, D. Bhattarai, A. Moldawer, Proc. SPIE 8278, 82780L (2012), doi: 10.1117/12.916213
• [2] M. Shatalov, J. Yang, W. Sun, R. Kennedy, R. Gaska, K. Liu, M. Shur, G. Tamulaitis, J. Appl. Phys. 105, 073103 (2009), doi: 10.1063/1.3103321
• [3] N. Nepal, J. Li, M.L. Nakarmi, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 88, 062103 (2006), doi: 10.1063/1.2172728
• [4] V.N. Jmerik, T.V. Shubina, A.M. Mizerov, K.G. Belyaev, A.V. Sakharov, M.V. Zamoryanskaya, A.A. Sitnikova, V.Yu. Davydov, P.S. Kop'ev, E.V. Lutsenko, N.V. Rzheutskii, A.V. Danilchyk, G.P. Yablonskii, S.V. Ivanov J. Cryst. Growth 311, 2080 (2009), doi: 10.1016/j.jcrysgro.2008.11.080
• [5] V.N. Jmerik, A.M. Mizerov, A.A. Sitnikova, P.S. Kop'ev, S.V. Ivanov, E.V. Lutsenko, N.P. Tarasuk, N.V. Rzheutskii, G.P. Yablonskii, Appl. Phys. Lett. 96, 141112 (2010), doi: 10.1063/1.3373834
• [6] A.A. Toropov, E.A. Shevchenko, T.V. Shubina, V.N. Jmerik, D.V. Nechaev, M.A. Yagovkina, A.A. Sitnikova, S.V. Ivanov, G. Pozina, J.P. Bergman, B. Monemar J. Appl. Phys. 114, 124306 (2013), doi: 10.1063/1.4822155
• [7] J. Mickevičius, G. Tamulaitis, E. Kuokštis, K. Liu, M.S. Shur, J.P. Zhang, R. Gaska, Appl. Phys. Lett. 90, 131907 (2007), doi: 10.1063/1.2717145

Identifiers

DOI

10.12693/APhysPolA.126.1140