Sb Layers on p-GaN: UPS, XPS and LEED Study

• Authors: M. Grodzicki , P. Mazur , J. Pers , S. Zuber , A. Ciszewski
• Languages of publication: EN

Abstracts

EN

The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.

Keywords

EN

81.05.Dz; 68.37.Ps; 68.37.Ef; 68.37.-d; 81.10.Bk; 81.07.-b

Discipline

• 81.10.Bk: Growth from vapor
• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)
• 81.05.Dz: II-VI semiconductors
• 68.37.Ef: Scanning tunneling microscopy (including chemistry induced with STM)
• 68.37.-d: Microscopy of surfaces, interfaces, and thin films
• 68.37.Ps: Atomic force microscopy (AFM)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1128-1130

Dates

published

2014-11

Contributors

author

M. Grodzicki

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

P. Mazur

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

J. Pers

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

S. Zuber

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

author

A. Ciszewski

• Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland

References

• [1] Y.N. Saripalli, L. Pei, T. Biggerstaff, S. Ramachandran, G.J. Duscher, M. Johnson, Appl. Phys. Lett. 90, 204106 (2007), doi: 10.1063/1.2741123
• [2] A.A. Gokhale, T.F. Kuech, M. Mavrikakis, J. Cryst. Growth 285, 146 (2005), doi: 10.1016/j.jcrysgro.2005.08.021
• [3] S. Tanuma, C.J. Powell, D.R. Penn, Surf. Interface Anal. 11, 577 (1988), doi: 10.1002/sia.740111107
• [4] V.M. Bermudez, J. Appl. Phys. 80, 1190 (1996), doi: 10.1063/1.362924
• [5] M. Grodzicki, P. Mazur, S. Zuber, J. Brona, A. Ciszewski, Appl. Surf. Sci. 304, 20 (2014), doi: 10.1016/j.apsusc.2013.11.146
• [6] J.R. Waldrop, R.W. Grant, Y.C. Wang, R.F. Davis, J. Appl. Phys. 72, 4757 (1992), doi: 10.1063/1.352086
• [7] Y.-J. Lin, C.-W. Hsu J. Electron. Mater. 33, 1037 (2004), doi: 10.1007/s11664-004-0032-y
• [8] E.A. Mechtly, in: Properties of Materials. Reference Data For Engineers Radio, Electronics, Computer, and Communications, 9th ed., Ed. W.M. Middleton, Butterworth-Heinemann, Woburn (MA) 2002, p. 4-1, doi: 10.1016/B978-075067291-7/50006-6
• [9] J. Speight, Lange's Handbook of Chemistry, 16th ed., McGraw-Hill Professional, Boston (MA) 2002, p. 4
• [10] V. Siklitsky, electronic archive: NSM Characteristics and Properties (http://www.ioffe.ru/SVA/NSM/)

Identifiers

DOI

10.12693/APhysPolA.126.1128