PL EN


Preferences help
enabled [disable] Abstract
Number of results
2014 | 126 | 5 | 1128-1130
Article title

Sb Layers on p-GaN: UPS, XPS and LEED Study

Content
Title variants
Languages of publication
EN
Abstracts
EN
The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
Keywords
Contributors
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
author
  • Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
References
  • [1] Y.N. Saripalli, L. Pei, T. Biggerstaff, S. Ramachandran, G.J. Duscher, M. Johnson, Appl. Phys. Lett. 90, 204106 (2007), doi: 10.1063/1.2741123
  • [2] A.A. Gokhale, T.F. Kuech, M. Mavrikakis, J. Cryst. Growth 285, 146 (2005), doi: 10.1016/j.jcrysgro.2005.08.021
  • [3] S. Tanuma, C.J. Powell, D.R. Penn, Surf. Interface Anal. 11, 577 (1988), doi: 10.1002/sia.740111107
  • [4] V.M. Bermudez, J. Appl. Phys. 80, 1190 (1996), doi: 10.1063/1.362924
  • [5] M. Grodzicki, P. Mazur, S. Zuber, J. Brona, A. Ciszewski, Appl. Surf. Sci. 304, 20 (2014), doi: 10.1016/j.apsusc.2013.11.146
  • [6] J.R. Waldrop, R.W. Grant, Y.C. Wang, R.F. Davis, J. Appl. Phys. 72, 4757 (1992), doi: 10.1063/1.352086
  • [7] Y.-J. Lin, C.-W. Hsu J. Electron. Mater. 33, 1037 (2004), doi: 10.1007/s11664-004-0032-y
  • [8] E.A. Mechtly, in: Properties of Materials. Reference Data For Engineers Radio, Electronics, Computer, and Communications, 9th ed., Ed. W.M. Middleton, Butterworth-Heinemann, Woburn (MA) 2002, p. 4-1, doi: 10.1016/B978-075067291-7/50006-6
  • [9] J. Speight, Lange's Handbook of Chemistry, 16th ed., McGraw-Hill Professional, Boston (MA) 2002, p. 4
  • [10] V. Siklitsky, electronic archive: NSM Characteristics and Properties (http://www.ioffe.ru/SVA/NSM/)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n521kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.