The Effect of Phosphorus Incorporation into SiO_2/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure

• Authors: K. Król , P. Konarski , M. Miśnik , M. Sochacki , J. Szmidt
• Languages of publication: EN

Abstracts

EN

This paper describes the influence of phosphorus incorporation into SiO_2/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated - the diffusion-based process of POCl_3 annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at E_{V} + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.

Keywords

EN

81.16.Pr; 77.84.Bw; 77.55.Dj

Discipline

• 81.16.Pr: Micro- and nano-oxidation(see also 82.37.Np Single molecule reaction kinetics)
• 77.84.Bw: Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1100-1103

Dates

published

2014-11

Contributors

author

K. Król

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
• Tele- and Radio Research Institute, Ratuszowa 11, 03-450 Warszawa, Poland

author

P. Konarski

• Tele- and Radio Research Institute, Ratuszowa 11, 03-450 Warszawa, Poland

author

M. Miśnik

• Tele- and Radio Research Institute, Ratuszowa 11, 03-450 Warszawa, Poland

author

M. Sochacki

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

J. Szmidt

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.126.1100