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2014 | 126 | 5 | 1096-1099
Article title

CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy

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EN
Abstracts
EN
This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained Zn_{1-x}Cd_{x}Se (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total Zn_{1-x}Cd_{x}Se quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding ZnS_{0.17}Se_{0.83}/ZnSe superlattice were introduced to compensate the compressive stress induced by the Zn_{1-x}Cd_{x}Se quantum well. The graded-index waveguide laser heterostructure with a CdSe/Zn_{0.65}Cd_{0.35}Se/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
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Year
Volume
126
Issue
5
Pages
1096-1099
Physical description
Dates
published
2014-11
Contributors
author
  • Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia
author
  • Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia
author
  • Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia
  • St.Petersburg State Polytechnical University, St.-Petersburg, Russia
author
  • Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia
author
  • Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia
  • Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia
author
  • Ioffe Physical-Technical Institute of RAS, St.-Petersburg, Russia
References
  • [1] M. Klude, D. Hommel, Appl. Phys. Lett. 79, 2523 (2001), doi: 10.1063/1.1411989
  • [2] J.-I. Kasai, R. Akimoto, T. Hasama, H. Ishikawa, S. Fujisaki, S. Tanaka, S. Tsuji, Appl. Phys. Expr. 4, 082102 (2011), doi: 10.1143/APEX.4.082102
  • [3] E.V. Lutsenko, M.V. Rzheutski, G.P. Yablonskii, S.V. Sorokin, S.V. Gronin, I.V. Sedova, P.S. Kop'ev, S.V. Ivanov, M. Alanzi, A. Hamidalddin, A. Alyamani, Quantum Electron. 43, 418 (2013), doi: 10.1070/QE2013v043n05ABEH015164
  • [4] S.V. Ivanov, A.A. Toropov, S.V. Sorokin, T.V. Shubina, I.V. Sedova, A.A. Sitnikova, P.S. Kop'ev, Zh.I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, G. Landwehr, Appl. Phys. Lett. 74, 498 (1999), doi: 10.1063/1.123167
  • [5] I.V. Sedova, O.G. Lyublinskaya, S.V. Sorokin, S.V. Gronin, A.A. Sitnikova, S.V. Ivanov, J. Korean Phys. Soc. 53, 3012 (2008), doi: 10.3938/jkps.53.3012
  • [6] S.V. Gronin, I.V. Sedova, S.V. Sorokin, G.V. Klimko, K.G. Belyaev, A.V. Lebedev, A.A. Sitnikova, A.A. Toropov, S.V. Ivanov, Phys. Status Solidi C 9, 1833 (2012), doi: 10.1002/pssc.201100606
  • [7] I.V. Sedova, E.V. Lutsenko, S.V. Gronin, S.V. Sorokin, A.G. Vainilovich, A.A. Sitnikova, G.P. Yablonskii, A. Alyamani, D.L. Fedorov, P.S. Kop`ev, S.V. Ivanov, Appl. Phys. Lett. 98, 171103 (2011), doi: 10.1063/1.122392
  • [8] M. Shiraishi, S. Tomiya, S. Taniguchi, K. Nakano, A. Ishibashi, M. Ikeda, Phys. Status Solidi A 152, 377 (1995), doi: 10.1002/pssa.2211520206
  • [9] Handbook on Physical Properties of Semiconductors, Vol. 3, II-VI Compound Semiconductors, Springer, 2004
  • [10] R.N. Kyutt, A.A. Toropov, S.V. Sorokin, T.V. Shubina, S.V. Ivanov, M. Karlsteen, M. Willander, Appl. Phys. Lett. 75, 373 (1999), doi: 10.1063/1.124379
  • [11] N. Peranio, A. Rosenauer, D. Gerthsen, S.V. Sorokin, I.V. Sedova, S.V. Ivanov, Phys. Rev. B 61, 16015 (2000), doi: 10.1103/PhysRevB.61.16015
  • [12] C.G. Van de Walle, Phys. Rev. B 39, 1871 (1989), doi: 10.1103/PhysRevB.39.1871
  • [13] F. Tinjod, I.-C. Robin, R. Andre, K. Kheng, H. Mariette, J. Alloys Comp. 371, 63 (2004), doi: 10.1016/j.jallcom.2003.05.006
  • [14] G. Cohen-Solal, F. Bailly, M. Barbé, J. Cryst. Growth 138, 68 (1994), doi: 10.1016/0022-0248(94)90782-X
  • [15] A. Benkert, C. Schumacher, K. Brunner, R.B. Neder, Appl. Phys. Lett. 90, 162105 (2007), doi: 10.1063/1.124379
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n511kz
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