The Effect of Surface Preparation on Physical Properties of Ni-ZnSe Junctions

• Authors: S. Chusnutdinow , V. Makhniy , M. Aleszkiewicz , W. Zaleszczyk , M. Slotov
• Languages of publication: EN

Abstracts

EN

We report on optical and photovoltaic properties of Ni-ZnSe junctions. We demonstrate that the preparation method of the ZnSe surface determines luminescence, optical transmission of ZnSe substrates and photovoltaic spectra of the Ni-ZnSe junctions. The observed effects are explained by formation of low-dimensional quantum structures on the ZnSe surface in result of the surface preparation procedure. This is confirmed by atomic force microscopy studies, which show the presence of grains with lateral dimensions of 30-300 nm on ZnSe surface. The smallest grains are responsible for a wide spectral band observed in photoluminescence at 3.4 eV, i.e., at much higher energies than the energy gap of bulk ZnSe, E_{g} ≈ 2.7 eV.

Keywords

EN

85.60.Dw; 78.55.Cr; 73.40.Ei

Discipline

• 78.55.Cr: III-V semiconductors
• 85.60.Dw: Photodiodes; phototransistors; photoresistors
• 73.40.Ei: Rectification

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1076-1078

Dates

published

2014-11

Contributors

author

S. Chusnutdinow

• Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

V. Makhniy

• Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi, Ukraine

author

M. Aleszkiewicz

• Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Zaleszczyk

• Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Slotov

• Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi, Ukraine

References

• [1] V.P. Makhniy, Techn. Phys. 66, 189 (1996)
• [2] V.P. Makhniy, V.V. Melnyk, Fiz. Tekhn. Poluprovodn. 29, 1468 (1995)
• [3] V.P. Makhniy, V.V. Melnyk, M.V. Skrypnik, Telecommun. Radio Eng. 66, 1769 (2007), doi: 10.1615/TelecomRadEng.v66.i19.60
• [4] V.P. Makhniy, I.I. German, E.I. Chernykh, Poverkhnost'. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya 6, 65 (2013), doi: 10.1134/S1027451013030294
• [5] V.P. Makhniy, M.M. Slyotov, E.V. Stets, I.V. Tkachenko, V.V. Gorley, P.P. Horley, Thin Solid Films 450, 222 (2004), doi: 10.1016/j.tsf.2003.11.170
• [6] S. Chusnutdinow, Ph.D. Thesis, Yuri Fedkovych Chernivtsi National University, Chernivtsi 2010

Identifiers

DOI

10.12693/APhysPolA.126.1076