Temperature Dependence of the Zero-Bias Conductance in the Graphene NIS Junction

• Authors: M. Wysokiński
• Languages of publication: EN

Abstracts

EN

The temperature dependence of the zero-bias conductance of the graphene-based, ballistic junction composed of the three consecutive regions: normal, with potential barrier ("insulating") and superconducting (NIS), is analyzed within the extended Blonder-Tinkham-Klapwijk approach. Within this approach we have found that oscillatory behavior of the conductance as a function of barrier strength is suppressed by the temperature - the amplitude diminishes with heating up the junction. Moreover, the subtle, although nontrivial feature of the system is reported: the average over the period of the oscillations of the zero-bias conductance for relatively small Fermi level mismatch behaves non-monotonically with the increase of the temperature with the maximum roughly at T/T_{c} ≈ 0.5.

Keywords

EN

74.45.+c; 73.23.Ad

Discipline

• 73.23.Ad: Ballistic transport
• 74.45.+c: Proximity effects; Andreev reflection; SN and SNS junctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 4a
• Pages: A-36-A-39

Dates

published

2014-10

Contributors

author

M. Wysokiński

• Marian Smoluchowski Institute of Physics, Jagiellonian University, W.S. Reymonta 4, 30-059 Kraków, Poland

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Identifiers

DOI

10.12693/APhysPolA.126.A-36