Effect of Post Growth Annealing on the Structural and Electrical Properties of ZnO/CuO Composite Nanostructures

• Authors: Mushtaque Hussain , Azam Khan , Omer Nur , Magnus Willander
• Languages of publication: EN

Abstracts

EN

In the present work, ZnO/CuO composite nanostructures have been grown on fluorine doped tin oxide coated glass substrate by aqueous chemical growth method. To observe the effect of post growth annealing (500°C, 1 min) on the structural properties of ZnO nanorods scanning electron microscope and X-ray diffraction techniques have been utilized. SEM images of post growth annealed (post growth annealed) sample reveal that the average diameter of ZnO NRs has considerably increased in comparison with as grown sample. Moreover after post growth annealing the ZnO NRs showed more clearly hexagonal wurtzite structure. Beside this the NRs are also uniform and well aligned with a high aspect ratio of ~10. In XRD pattern the strongly intense (002) peak of the post growth annealing sample suggest that the crystal quality of the NRs have also been improved significantly. Since the structural improvement have a significant impact on charge transport properties as well, therefore the effect of post growth annealed has also been investigated by the electrical characterization of ZnO/CuO based heterojunction. The current-voltage measurements of the post growth annealed sample showed improvement in the current in comparison with as grown sample. The impedance study has also confirmed that the post growth annealed has influence on the electrical properties. The presented post growth annealed heterojunction of ZnO/CuO may have space in applications like sensors and oxide based diodes in the devices fabrication.

Keywords

EN

81.40.Rs; 81.40.-z

Discipline

• 81.40.-z: Treatment of materials and its effects on microstructure, nanostructure, and properties
• 81.40.Rs: Electrical and magnetic properties related to treatment conditions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 3
• Pages: 849-854

Dates

published

2014-08

received

2013-12-13

Contributors

author

Mushtaque Hussain

• Department of Science and Technology, Campus Norrköping, Linköping University, SE-60174 Norrköping, Sweden

author

Azam Khan

• Department of Science and Technology, Campus Norrköping, Linköping University, SE-60174 Norrköping, Sweden

author

Omer Nur

• Department of Science and Technology, Campus Norrköping, Linköping University, SE-60174 Norrköping, Sweden

author

Magnus Willander

• Department of Science and Technology, Campus Norrköping, Linköping University, SE-60174 Norrköping, Sweden

References

• [1] S. Ilican, M. Caglar, Y. Caglar, Appl. Surf. Sci. 256, 7204 (2010), doi: 10.1016/j.apsusc.2010.05.052
• [2] Z.L. Wang, J.H. Song, Science 312, 242 (2006), doi: 10.1126/science.1124005
• [3] K. Ando, H. Saito, Z.W. Jin, T. Fukumura, M. Kawasaki, Y. Matsumoto, H. Koinuma, J. Appl. Phys. 89, 7284 (2001), doi: 10.1063/1.1356035
• [4] R. Ghosh, S. Fujihara, D. Basak, J. Electr. Mater. 35, 1728 (2006), doi: 10.1007/s11664-006-0226-6
• [5] J.Y. Park, D.E. Song, S.S. Kim, Nanotechnology 19, 105503 (2008), doi: 10.1088/0957-4484/19/10/105503
• [6] M.H. Asif, A. Fulati, O. Nur, M. Willander, C. Brannmark, P. Stralfors, S.I. Borjesson, F. Elinder, Appl. Phys. Lett. 95, 023703 (2009), doi: 10.1063/1.3176441
• [7] Z.L. Wang,J. Phys.: Cond. Matter. 16, R829 (2004), doi: 10.1088/0953-8984/16/25/R01
• [8] A. Zainelabdin, S. Zaman, G. Amin, O. Nur, M. Willander, Cryst. Growth. Des. 10, 3250 (2010), doi: 0.1021/cg100390x
• [9] M.Y. Soomro, I. Hussain, N. Bano, O. Nur, M. Willander, Phys. Status. Solidi R 6, 80 (2012), doi: 10.1002/pssr.201290002
• [10] A. Khan, M.A. Abbasi, M. Hussain, Z.H. Ibupoto, J. Wissting, O. Nur, M. Willander, Appl. Phys. Lett. 101, 193506 (2012), doi: 10.1063/1.4766921
• [11] M. Willander, O. Nur, S. Zaman, A. Zainelabdin, N. Bano, I. Hussain, J. Phys. D: Appl. Phys. 44, 224017 (2011), doi: 10.1088/0022-3727/44/22/224017
• [12] M. Willander, O. Nur, G. Amin, A. Zainelabdin, S. Zaman, MRS Proc. 1406, (2011), doi: 10.1557/opl.2012.65
• [13] J. Morales, L. Sanchez, F. Martin, J.R. Ramos-Barrado, M. Sanchez, Electrochem. Acta 49, 4589 (2004), doi: 10.1016/j.electacta.2004.05.012
• [14] S.Y. Gao, S.X. Yang, J. Shu, S.X. Zhang, Z.D. Li, K. Jiang, J. Phys. Chem. C 112, 19324 (2008), doi: 10.1021/jp808545r
• [15] X.J. Zhang, D.G. Zhang, X.M. Ni, J.M. Song, H.G. Zheng, J. Nanopart. Res. 10, 839 (2008), doi: 10.1007/s11051-007-9320-9
• [16] Y.W. Zhu, T. Yu, F.C. Cheong, X.J. Xu, C.T. Lim, V.B.C. Tan, J.T.L. Thong, C.H. Sow, Nanotechnology 16, 88 (2005), doi: 10.1088/0957-4484/16/1/018
• [17] F. Teng, W. Yao, Y. Zheng, Y. Ma, Y. Teng, T. Xu, S. Liang, Y. Zhu, Sens. Act. B: Chem. 134, 761 (2008), doi: 10.1016/j.snb.2008.06.023
• [18] X.Y. Xue, L.L. Xing, Y.J. Chen, S.L. Shi, Y.G. Wang, T.H. Wang, J. Phys. Chem. C. 112, 12157 (2008), doi: 10.1021/jp8037818
• [19] J. Morales, L. Sanchez, F. Martin, J.R. Ramos-Barrado, M. Sanchez, Thin Solid Films 474, 133 (2005), doi: 10.1016/j.tsf.2004.08.071
• [20] X. Fei, Z.Z. Shao, X. Chen, Nanoscale 5, 7991 (2013), doi: 10.1039/c3nr01872e
• [21] M. Xu, F. Wang, B. Ding, X. Song, J. Fang, RSC Advances 2, 2240 (2012), doi: 10.1039/C2RA01119K
• [22] D. Li, Y.H. Leung, A.B. Djurisic, Z.T. Liu, M.H. Xie, J. Gao, W.K. Chan, J. Cryst. Growth 282, 105 (2005), doi: 10.1016/j.jcrysgro.2005.04.090
• [23] A. Zainelabdin, S. Zaman, G. Amin, O. Nur, M. Willander, Appl. Phys. A 108, 921 (2012), doi: 10.1007/s00339-012-6995-2
• [24] A. Zainelabdin, G. Amin, S. Zaman, O. Nur, J. Lu, L. Hultman, M. Willander, J. Mater. Chem. 22, 11583 (2012), doi: 10.1039/C2JM16597
• [25] M. Willander, K.ul. Hassan, O. Nur, A. Zainelabdin, S. Zaman, G. Amin, J. Mater. Chem. 22, 2337 (2012), doi: 10.1039/C1JM15152E
• [26] Y. Zhu, C.H. Sow, T. Yu, Q. Zhao, P. Li, Z. Shen, D. Yu, J.T. Thong, Adv. Funct. Mater. 16, 2415 (2006), doi: 10.1002/adfm.200600251
• [27] P. Wang, X. Zhao, B. Li, Opt. Expr. 19, 11271 (2011), doi: 10.1364/OE.19.011271
• [28] S. Jung, S. Jeon, K. Yong, Nanotechnology 22, 015606 (2011), doi: 10.1088/0957-4484/22/1/015606
• [29] S. Mandal, K. Sambasivarao, A. Dhar, S.K. Ray, AIP 106, 024103 (2009), doi: 10.1063/1.3168489
• [30] V. Biju, M. Abdul Khaddar, J. Mater. Sci. 36, 5779 (2001), doi: 10.1023/A:1012995703754
• [31] Y.C. Lee, S.Y. Hu, W. Water, Y. Huang, M. Yang, T. Shen, K. Tiong, C. Huang, Solid State Commun. 143, 250 (2007), doi: 10.1016/j.ssc.2007.05.021
• [32] T. Yen, D. Strome, S.J. Kim, A.N. Cartwright, W.A. Anderson, J. Electron. Mater. 37, 764 (2008), doi: 10.1007/s11664-007-0357-4
• [33] D. Fan, R. Zhang, X. Wang, Physica E: Low-dimens. Syst. Nanostr. 42, 2081 (2010), doi: 10.1016/j.physe.2010.03.031
• [34] S.K. Jaiswal, J. Kumar, J. Alloys Comp. 509, 3859 (2011), doi: 10.1016/j.jallcom.2010.12.125
• [35] M. Dawber, J.F. Scotta, A.J. Hartmann, J. Eur. Ceram. Soc. 21, 1633 (2001), doi: 10.1016/S0955-2219(01)00081-4

Identifiers

DOI

10.12693/APhysPolA.126.849