Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects

• Authors: E. Keskenler , S. Aydın , G. Turgut , S. Doğan
• Languages of publication: EN

Abstracts

EN

Bismuth (Bi) doped zinc oxide (ZnO:Bi) thin films were prepared on glass substrates by sol-gel spin coating technique using homogeneous precursor solutions, and effects of Bi doping on the structural and optical properties of ZnO were investigated. The crystalline of ZnO films shifted from polycrystalline nature to amorphous nature with Bi doping. The plane stresses (σ) for hexagonal ZnO and ZnO:Bi crystals were calculated according to the biaxial strain model. The Urbach rule was studied as a function of non-thermal component to the disorder (defects in crystal structures) which is especially observed in the case of non-crystal semiconductors. The calculated Urbach energies and steepness parameters of undoped ZnO and ZnO:Bi films varied between 44.33 meV and 442.67 meV, and 58.3 × 10^{-2} and 5.8 × 10^{-2}, respectively. The Urbach energies of the films increased with an increase in the Bi doping concentration and a great difference was observed for 7.0 mol.% doping. The band gap values of the films exhibited a fluctuated behavior as a result of doping effect.

Keywords

EN

78.20.-e; 78.66.Hf; 78.40.Fy; 78.66.Jg; 68.37.Yz; 68.55.ag; 68.60.Bs

Discipline

• 78.66.Hf: II-VI semiconductors
• 68.37.Yz: X-ray microscopy
• 68.60.Bs: Mechanical and acoustical properties
• 68.55.ag: Semiconductors
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 78.66.Jg: Amorphous semiconductors; glasses
• 78.40.Fy: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 3
• Pages: 782-787

Dates

published

2014-08

received

2012-10-03

(unknown)

2014-04-25

(unknown)

2014-06-26

Contributors

author

E. Keskenler

• Recep Tayyip Erdoğan University, Faculty of Engineering, Department of Nanotechnology Engineering Rize, 53100, Turkey

author

S. Aydın

• Atatürk University, K. Karabekir Education Faculty, Department of Physics, Erzurum, 25240, Turkey

author

G. Turgut

• Atatürk University, K. Karabekir Education Faculty, Department of Physics, Erzurum, 25240, Turkey

author

S. Doğan

• Department of Electrical and Electronics Engineering, Faculty of Engineering and Architecture Balikesir University, Balikesir, 10145, Turkey

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Identifiers

DOI

10.12693/APhysPolA.126.782