Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method

• Authors: Y. Gülen
• Languages of publication: EN

Abstracts

EN

In this material production research, undoped and Ba-doped nanostructured PbS films are fabricated on glass surfaces by SILAR method. The structural, optical and morphological properties of the films are examined via scanning electron microscopy, UV-vis spectrophotometry and X-ray diffraction analysis. Scanning electron microscopy analysis revealed that Ba-doping concentration influences the size of the thin film's nanoparticles. X-ray diffraction results showed that all of the thin films are in a face centered cubic structure. Optical studies, in the room temperature, revealed that the optical band gap of the films increases as Ba-doping concentration is increased. The intercept values on the energy axis in the range of 1.86 eV and 2.12 eV for 1% and 8% Ba-doped PbS films respectively. As a result, it is concluded that the structural, optical and morphological properties of the fabricated thin films are directly depend on the Ba doping ratio.

Keywords

EN

61.05.-a; 61.05.cp; 68.55.Ln

Discipline

• 61.05.-a: Techniques for structure determination
• 61.05.cp: X-ray diffraction
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 3
• Pages: 763-768

Dates

published

2014-08

received

2013-12-20

(unknown)

2014-03-10

(unknown)

2014-03-28

Contributors

author

Y. Gülen

• Department of Physics, Faculty of Arts and Sciences, Marmara University, Istanbul, Turkey

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Identifiers

DOI

10.12693/APhysPolA.126.763