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2014 | 126 | 3 | 763-768
Article title

Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method

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EN
Abstracts
EN
In this material production research, undoped and Ba-doped nanostructured PbS films are fabricated on glass surfaces by SILAR method. The structural, optical and morphological properties of the films are examined via scanning electron microscopy, UV-vis spectrophotometry and X-ray diffraction analysis. Scanning electron microscopy analysis revealed that Ba-doping concentration influences the size of the thin film's nanoparticles. X-ray diffraction results showed that all of the thin films are in a face centered cubic structure. Optical studies, in the room temperature, revealed that the optical band gap of the films increases as Ba-doping concentration is increased. The intercept values on the energy axis in the range of 1.86 eV and 2.12 eV for 1% and 8% Ba-doped PbS films respectively. As a result, it is concluded that the structural, optical and morphological properties of the fabricated thin films are directly depend on the Ba doping ratio.
Keywords
EN
Publisher

Year
Volume
126
Issue
3
Pages
763-768
Physical description
Dates
published
2014-08
received
2013-12-20
(unknown)
2014-03-10
(unknown)
2014-03-28
Contributors
author
  • Department of Physics, Faculty of Arts and Sciences, Marmara University, Istanbul, Turkey
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n322kz
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