Compositional Dependence of Optical Modes Frequencies in TlGa_xIn_{1-x}S_2 Layered Mixed Crystals (0 ≤ x ≤1)

• Authors: M. Isik , N. Gasanly , F. Korkmaz
• Languages of publication: EN

Abstracts

EN

The infrared transmittance and Raman scattering spectra in TlGa_xIn_{1-x}S_2 (0 ≤ x ≤1) layered mixed crystals grown by the Bridgman method were studied in the frequency ranges of 400-2000 and 250-400 cm^{-1}, respectively. The bands observed at room temperature in IR transmittance spectra of TlGa_xIn_{1-x}S_2 were interpreted in terms of multiphonon absorption processes. The dependences of the frequencies of IR- and Raman-active modes on the composition of TlGa_xIn_{1-x}S_2 mixed crystals were also established. The structural characterization of the mixed crystals was investigated by means of X-ray diffraction measurements and compositional dependence of lattice parameters was revealed.

Keywords

EN

61.82.Fk; 77.84.Bw; 78.20.-e; 78.30.-j

Discipline

• 77.84.Bw: Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 61.82.Fk: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 3
• Pages: 747-751

Dates

published

2014-08

received

2014-01-29

(unknown)

2014-04-02

Contributors

author

M. Isik

• Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06800 Ankara, Turkey

author

F. Korkmaz

• Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey

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Identifiers

DOI

10.12693/APhysPolA.126.747