Structural, Optical, and Electrical Studies on Pulse Plated AgInSe_2 Films

• Authors: S. Murugan , K. Murali
• Languages of publication: EN

Abstracts

EN

In this work, the pulse electrodeposition technique was employed for the first time to deposit AgInSe_2 films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO_2. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 Ω/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to AgInSe_2. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 Ω cm to 12.4 Ω cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/AgInSe_2 solar cells increased with duty cycle.

Keywords

EN

68.55.ag; 73.61.Jc; 88.40.hj; 88.40.jn

Discipline

• 88.40.jn: Thin film Cu-based I-III-VI2 solar cells
• 73.61.Jc: Amorphous semiconductors; glasses
• 68.55.ag: Semiconductors
• 88.40.hj: Efficiency and performance of solar cells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 3
• Pages: 727-732

Dates

published

2014-08

received

2012-09-13

(unknown)

2014-04-21

Contributors

author

S. Murugan

• Dept. of Physics, AVC College (Autonomous), Mannanpandal, Mayiladuthurai-609001, India

author

K. Murali

• ECMS Division, CSIR-CECRI, Karaikudi, India

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Identifiers

DOI

10.12693/APhysPolA.126.727