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2014 | 126 | 3 | 727-732
Article title

Structural, Optical, and Electrical Studies on Pulse Plated AgInSe_2 Films

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EN
In this work, the pulse electrodeposition technique was employed for the first time to deposit AgInSe_2 films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM SeO_2. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 Ω/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to AgInSe_2. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 Ω cm to 12.4 Ω cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/AgInSe_2 solar cells increased with duty cycle.
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author
  • Dept. of Physics, AVC College (Autonomous), Mannanpandal, Mayiladuthurai-609001, India
author
  • ECMS Division, CSIR-CECRI, Karaikudi, India
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n315kz
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