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2014 | 126 | 2 | 505-507
Article title

Phason Contribution to the Dislocation Loop Bias in Quasicrystals

Content
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Languages of publication
EN
Abstracts
EN
We develop a model of the absorption of vacancies and self-interstitial atoms by dislocation loops and associated phason defects in quasicrystals under irradiation. The capture efficiency and the bias of the loop for radiation point defects are evaluated for variable loop sizes. Numerical calculation of these quantities is performed for comparison. It is shown that phason defects decrease the total bias of the dislocation loop in a quasicrystal.
Keywords
EN
Publisher

Year
Volume
126
Issue
2
Pages
505-507
Physical description
Dates
published
2014-08
Contributors
author
  • NSC Kharkov Institute of Physics and Technology, Kharkov 61108, Ukraine
author
  • NSC Kharkov Institute of Physics and Technology, Kharkov 61108, Ukraine
author
  • NSC Kharkov Institute of Physics and Technology, Kharkov 61108, Ukraine
References
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  • [10] J.T. Okada, M. Inui, D. Ishikawa, A.Q.R. Baron, K. Matsuda, S. Tsutsui, Y. Watanabe, J. Phys., Condens. Matter 18, L613 (2006), doi: 10.1088/0953-8984/18/49/L03
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n220kz
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