Electric-Elastic Field Induced by a Straight Dislocation in One-Dimensional Quasicrystals

• Authors: L. Yang , Y. Gao , E. Pan , N. Waksmanski
• Languages of publication: EN

Abstracts

EN

By using the generalized Stroh formalism, the electric-elastic field induced by a straight dislocation parallel to a periodic axis of a one-dimensional quasicrystal is obtained. The derivation is concise and the solution is in an exact closed form. As an illustration, the electric-elastic fields around a straight dislocation in a one-dimensional hexagonal quasicrystal are studied. Besides the interesting numerical results presented, the generalized Stroh formalism can be applied to more complicated dislocation problems in quasicrystals.

Keywords

EN

61.44.Br; 61.72.Lk; 62.20.D-

Discipline

• 62.20.D-: Elasticity(for materials treatment effects on elastic properties, see 81.40.Jj)
• 61.72.Lk: Linear defects: dislocations, disclinations
• 61.44.Br: Quasicrystals

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 2
• Pages: 467-470

Dates

published

2014-08

Contributors

author

L. Yang

• College of Science, China Agricultural University, Beijing 100083, China
• College of Engineering, China Agricultural University, Beijing 100083, China

author

Y. Gao

• College of Science, China Agricultural University, Beijing 100083, China

author

E. Pan

• Department of Civil Engineering, University of Akron, Akron, OH 44325-3905, USA

author

N. Waksmanski

• Department of Civil Engineering, University of Akron, Akron, OH 44325-3905, USA

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Identifiers

DOI

10.12693/APhysPolA.126.467