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2014 | 126 | 1 | 415-416
Article title

Electrical Resistivity of CrN Thin Films

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EN
Abstracts
EN
The work is focused on the measurements of electrical resistivity of CrN thin films deposited on glass substrates by DC-magnetron sputtering in Ar+N_{2} atmosphere. The studied samples reveal semiconducting behaviour of electrical resistivity in the whole range of tested preparation parameters (such as pressure and composition of Ar-N_{2} mixture), whereas the electrical transport regime is strongly influenced by parameters of preparation. Numerical analysis of the experimental data showed that electrical transport can be adequately described in terms of variable-range hopping conduction in selected temperature intervals. Moreover, S-shaped anomaly in ρ(T) dependence, being expected to be a consequence of phase transition to a low-temperature antiferromagnetic orthorhombic phase, has been observed for sample with the highest concentration of N_{2} in the temperature interval of 220-250 K. The obtained results indicate that technology processes typically used for preparation of CrN coatings represent a promising potential to develop also high sensitivity cryogenic sensors for high magnetic fields applications.
Keywords
EN
Publisher

Year
Volume
126
Issue
1
Pages
415-416
Physical description
Dates
published
2014-07
Contributors
author
  • Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 040 01 Košice, Slovakia
author
  • Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 040 01 Košice, Slovakia
author
  • Institute of Materials Research, Slovak Academy of Sciences, Watsonova 47, 040 01 Košice, Slovakia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n1201kz
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