Magnetoresistance Anisotropy and Magnetic H-T Phase Diagram of Tm_{0.996}Yb_{0.004}B_{12}

• Authors: N. Sluchanko , A. Azarevich , A. Bogach , V. Glushkov , S. Demishev , S. Gavrilkin , S. Gabani , K. Flachbart , N. Shitsevalova , V. Filipov , J. Vanacken , V. Moshchalkov , J. Stankiewicz
• Languages of publication: EN

Abstracts

EN

The antiferromagnetic ground state has been studied by transverse magnetoresistance, heat capacity and magnetization measurements, which were carried out on high quality single crystals of Tm_{0.996}Yb_{0.004}B_{12} dodecaboride in strong magnetic fields at liquid helium temperatures. Both antiferromagnetic-paramagnetic (AF-P) and spin-orientation (AF1-AF2) phase transitions have been observed, and allowed to construct a complicated magnetic H-T phase diagram for this compound. Strong magnetoresistance anisotropy was found both in AF states (ρ(H||[110])/ρ(H||[111])~ 1.2 at H~ 20 kOe) and at the critical field of AF-P transition (H_{N}[100]/H_{N}[111]~ 1.25) in this magnetic metal with a simple fcc crystal structure.

Keywords

EN

72.15.Gd; 73.43.Qt; 75.30.Kz; 75.20.Hr; 75.50.Ee

Discipline

• 75.50.Ee: Antiferromagnetics
• 72.15.Gd: Galvanomagnetic and other magnetotransport effects(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport)
• 75.20.Hr: Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions(for Kondo effect and scattering mechanisms in electronic conduction, see 72.15.Qm and 72.10.Fk)
• 73.43.Qt: Magnetoresistance(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport in magnetic properties and materials)
• 75.30.Kz: Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)(for ferroelectric phase transitions, see 77.80.B-; for superconductivity phase diagrams, see 74.25.Dw)

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 1
• Pages: 332-333

Dates

published

2014-07

Contributors

author

N. Sluchanko

• General Physics Institute of RAS, 119991 Moscow, Russia

author

A. Azarevich

• General Physics Institute of RAS, 119991 Moscow, Russia
• Moscow Institute of Physics and Technology, 141700 Moscow Region, Russia

author

A. Bogach

• General Physics Institute of RAS, 119991 Moscow, Russia

author

V. Glushkov

• General Physics Institute of RAS, 119991 Moscow, Russia
• Moscow Institute of Physics and Technology, 141700 Moscow Region, Russia

author

S. Demishev

• General Physics Institute of RAS, 119991 Moscow, Russia
• Moscow Institute of Physics and Technology, 141700 Moscow Region, Russia

author

S. Gavrilkin

• Physical Institute of RAS, 53 Leninsky pr.,119991 Moscow, Russia

author

S. Gabani

• Institute of Experimental Physics of SAS, 040 01 Košice, Slovak Republic

author

K. Flachbart

• Institute of Experimental Physics of SAS, 040 01 Košice, Slovak Republic

author

N. Shitsevalova

• Institute for Problems of Materials Science NASU, 03680 Kiev, Ukraine

author

V. Filipov

• Institute for Problems of Materials Science NASU, 03680 Kiev, Ukraine

author

J. Vanacken

• Inst. for Nanoscale Physics and Chemistry, KU Leuven, Leuven 3001, Belgium

author

V. Moshchalkov

• Inst. for Nanoscale Physics and Chemistry, KU Leuven, Leuven 3001, Belgium

author

J. Stankiewicz

• Ins. de Ciencia de Materiales de Aragón, Facultad de Ciencias, 50009 Zaragoza, Spain

References

• [1] N.E. Sluchanko, A.N. Azarevich, A.V. Bogach, V.V. Glushkov, S.V. Demishev, M.A. Anisimov, A.V. Levchenko, V.B. Filipov, N.Yu. Shitsevalova, JETP 115, 509 (2012), doi: 10.1134/S1063776112090130
• [2] N.E. Sluchanko, A.N. Azarevich, A.V. Bogach, I.I. Vlasov, V.V. Glushkov, S.V. Demishev, A.A. Maksimov, I.I. Tartakovskii, E.V. Filatov, K. Flachbart, S. Gabani, V.B. Filippov, N.Yu. Shitsevalova, V.V. Moshchalkov, JETP 113, 468 (2011), doi: 10.1134/S1063776111080103
• [3] F. Iga, N. Shimizu, T. Takabatake, J. Magn. Magn. Mater. 177-181, 337 (1998), doi: 10.1016/S0304-8853(97)00493-9

Identifiers

DOI

10.12693/APhysPolA.126.332