EN
Boron was partially substituted by phosphorus (3 at.%) in two Si-poor Fe-Nb-Cu-B-Si Finemets. Mostly non-significant changes were observed after vacuum annealing at 500°C, whereas equivalent Ar annealing resulted in significantly better soft-magnetic properties, which suffer from compressive surfaces stress. Possibly by hampering surface crystallization, the substitution eased the surfaces stress and reduced undesired off-axis anisotrophy at the cost of limiting the useful annealing temperature.