Magnetic Properties of Yttrium-Substituted NiZn Ferrites

• Authors: V. Jančárik , E. Ušák , M. Šoka , M. Ušáková
• Languages of publication: EN

Abstracts

EN

Polycrystalline NiZn ferrite doped with a small amount of Y^{3+} ions and having the composition of Ni_{0.42}Zn_{0.58}Y_{x}Fe_{2-x}O_{4}, where x=0.00, 0.01, 0.02, 0.04, 0.06, 0.08 and 0.10, was analyzed. Specimens were prepared by the ceramic method. Thermo-magnetic analysis and evaluation of hysteresis loops parameters were chosen as main examination methods in this study. Various parameters, such as Curie temperature T_{C}, coercive field H_{c}, remanent magnetic flux density B_{r}, hysteresis loop area and amplitude/initial permeability were studied at low frequencies.

Keywords

EN

75.50.Gg; 75.30.Cr; 75.60.-d; 74.62.Dh

Discipline

• 75.30.Cr: Saturation moments and magnetic susceptibilities
• 75.50.Gg: Ferrimagnetics
• 75.60.-d: Domain effects, magnetization curves, and hysteresis(for dynamics of domain structures, see 75.78.Fg)
• 74.62.Dh: Effects of crystal defects, doping and substitution(for specific crystal defects, see 61.72.-y)

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 1
• Pages: 90-91

Dates

published

2014-07

Contributors

author

V. Jančárik

• Institute Electrical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

author

E. Ušák

• Institute Electrical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

author

M. Šoka

• Institute Electrical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

author

M. Ušáková

• Institute Electrical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

References

• [1] S.E. Jacobo, S. Duhalde, H.R. Bertorello, J. Magn. Magn. Mater. 227-276, 2253 (2004), doi: 10.1016/j.jmmm.2003.12.564
• [2] J. Sun, J. Li, G. Sun, J. Magn. Magn. Mater 250, 20 (2002), doi: 10.1016/S0304-8853(02)00403-1
• [3] Y.C. Yang, L.S. Kong, S.H. Sun, D.M. Gu, B.P. Cheng, J. Appl. Phys. 63, 3702 (1988), doi: 10.1063/1.340667
• [4] V. Jančárik, E. Ušák, Journal of Electrical Engineering 50, 63 (1999)
• [5] E. Ušák, Advances in Electrical and Electronic Engineering 11, 116 (2013)

Identifiers

DOI

10.12693/APhysPolA.126.90