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Number of results
2014 | 125 | 6 | 1400-1404

Article title

Thermal Desorption Studies of Ar^{+} Implanted Silicon

Content

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Languages of publication

EN

Abstracts

EN
Thermal desorption spectrometry measurements were performed for Ar implanted Si samples. Implantation energy E_{i} varied in the range 85-175 keV. The release of implanted Ar in two steps was observed in the temperature range 930-1300 K: the relatively narrow peak at lower temperature ( ≈ 930 K for implantation fluence 5 × 10^{16} cm^{-2}) is due to the release of Ar from the agglomerations (bubbles) while the broader peak observed for higher temperatures ( ≈ 950 K for implantation fluence 5 × 10^{16} cm^{-2}) comes from Ar atoms diffusing out of the sample. Inverse order of peaks is observed compared to the results for lower energy implantations (< 50 keV). Analyzing the thermal desorption spectra collected for different heating ramp rates enabled estimation of the desorption activation energy (2 eV for E_{i} = 85 keV and 1.7 eV for E_{i} = 115 keV).

Keywords

EN

Year

Volume

125

Issue

6

Pages

1400-1404

Physical description

Dates

published
2014-06

Contributors

author
  • Institute of Physics, Maria Curie-Skłodowska University, Lublin, Poland
author
  • Institute of Physics, Maria Curie-Skłodowska University, Lublin, Poland
author
  • Institute of Physics, Maria Curie-Skłodowska University, Lublin, Poland
author
  • Institute of Physics, Maria Curie-Skłodowska University, Lublin, Poland
author
  • National Centre for Nuclear Studies, Świerk-Otwock, Poland
author
  • National Centre for Nuclear Studies, Świerk-Otwock, Poland
author
  • Laboratory of Nuclear Problems, JINR Dubna, Russia
author
  • Institute of Physics, Maria Curie-Skłodowska University, Lublin, Poland

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv125n639kz
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