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Thermal desorption spectrometry measurements were performed for Ar implanted Si samples. Implantation energy E_{i} varied in the range 85-175 keV. The release of implanted Ar in two steps was observed in the temperature range 930-1300 K: the relatively narrow peak at lower temperature ( ≈ 930 K for implantation fluence 5 × 10^{16} cm^{-2}) is due to the release of Ar from the agglomerations (bubbles) while the broader peak observed for higher temperatures ( ≈ 950 K for implantation fluence 5 × 10^{16} cm^{-2}) comes from Ar atoms diffusing out of the sample. Inverse order of peaks is observed compared to the results for lower energy implantations (< 50 keV). Analyzing the thermal desorption spectra collected for different heating ramp rates enabled estimation of the desorption activation energy (2 eV for E_{i} = 85 keV and 1.7 eV for E_{i} = 115 keV).
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