Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant

• Authors: P. Węgierek , P. Billewicz
• Languages of publication: EN

Abstracts

EN

The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of Ne^{+} ions (D=1.5 × 10^{14} cm^{-2}, E=100 keV). On the basis of results obtained for samples annealed at the temperature T_{a}=598 K and measured at the testing temperature T_{p}=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.

Keywords

EN

61.72.uj; 61.72.Cc; 72.80.Ey

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 61.72.uj: III-V and II-VI semiconductors
• 72.80.Ey: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 6
• Pages: 1392-1396

Dates

published

2014-06

Contributors

author

P. Węgierek

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

P. Billewicz

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

References

• [1] P. Zukowski, T. Koltunowicz, J. Partyka, P. Wegierek, F.F. Komarov, A.M. Mironov, N. Butkievith, D. Freik, Vacuum 81, 1137 (2007), doi: 10.1016/j.vacuum.2007.01.070
• [2] T.N. Koltunowicz, P. Zhukowski, V.V. Fedotova, A.M. Saad, A.K. Fedotov, Acta Phys. Pol. A 120, 39 (2011) http://przyrbwn.icm.edu.pl/APP/PDF/120/a120z1p09.pdf
• [3] P. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova, A.V. Larkin, Vacuum 83, S280 (2009), doi: 10.1016/j.vacuum.2009.01.082
• [4] P. Zukowski, P. Węgierek, P. Billewicz, T.N. Koltunowicz, F. Komarov, Acta Phys. Pol. A 120, 125 (2011) http://przyrbwn.icm.edu.pl/APP/PDF/120/a120z1p32.pdf
• [5] P.W. Zukowski, S.B. Kantorow, K. Kiszczak, D. Maczka, A. Rodzik, V.F. Stelmakh, E. Czarnecka-Such, Phys. Status Solidi A - Appl. Res. 128, K117 (1991), doi: 10.1002/pssa.2211280243
• [6] P.W. Zukowski, A. Rodzik, Yu.A. Shostak, Semiconductors 31, 610 (1997), doi: 10.1134/1.1187227
• [7] P.V. Zukowski, J. Partyka, P. Węgierek, J.W. Sidorenko, J.A. Szostak, A. Rodzik, Semiconductors 33, 276 (1999) http://10.1134/1.1187887
• [8] P. Zukowski, J. Partyka, P. Wegierek, Yu. Shostak, Yu. Sidorenko, A. Rodzik, Semiconductors 34, 1124 (2000), doi: 10.1134/1.1317568
• [9] M. Turek, A. Droździel, K. Pyszniak, D. Mączka, Przegląd Elektrotechniczny 11b, 328 (2012) in Polish) http://www.red.pe.org.pl/abstract_pl.php?nid=6840
• [10] M. Turek, A. Drozdziel, K. Pyszniak, S. Prucnal, D. Mączka, Y.V. Yushkevich, Y.A. Vaganov, Instrum. Exp. Tech. 55, 469 (2012), doi: 10.1134/S0020441212030062
• [11] M. Turek, S. Prucnal, A. Drozdziel, K. Pyszniak, Rev. Sci. Instrum. 80, 043304 (2009), doi: 10.1063/1.3117357
• [12] M. Turek, S. Prucnal, A. Drozdziel, K. Pyszniak, Nucl. Instrum. Methods Phys. Res. B 269, 700 (2011), doi: 10.1016/j.nimb.2011.01.133
• [13] J. Żuk, M. Turek, K. Pyszniak, A. Droździel, S. Prucnal, Przegląd Elektrotechniczny 7, 193 (2010) (in Polish) http://www.red.pe.org.pl/abstract_pl.php?nid=4005
• [14] P. Węgierek, Electric Conductance in Strongly Defected Semiconductors Modified with Ion Techniques, Monography, Politechnika Lubelska, Lublin 2013 (in Polish)
• [15] P. Węgierek, M. Kowalski, Electronics - Constructions, Technologies, Appliances 9, 100 (2009) (in Polish) http://yadda.icm.edu.pl/yadda/element/bwmeta1.element.baztech-article-BWAN-0005-0049
• [16] R.C. Newman, D.N.J. Totterdell, J. Phys. C, Solid State Phys. 8, 3944 (1975), doi: 10.1088/0022-3719/8/22/032
• [17] N.F. Mott, E.A. Davis, Electronic Process in Non-crystalline Materials, Clarendon Press, Oxford 1979
• [18] P. Węgierek, P. Billewicz, Acta Phys. Pol. A 120, 122 (2011) http://przyrbwn.icm.edu.pl/APP/PDF/120/a120z1p31.pdf
• [19] P. Węgierek, P. Billewicz, Acta Phys. Pol. A 123, 948 (2013), doi: 10.12693/APhysPolA.123.948

Identifiers

DOI

10.12693/APhysPolA.125.1392