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2014 | 125 | 6 | 1392-1396
Article title

Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant

Content
Title variants
Languages of publication
EN
Abstracts
EN
The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of Ne^{+} ions (D=1.5 × 10^{14} cm^{-2}, E=100 keV). On the basis of results obtained for samples annealed at the temperature T_{a}=598 K and measured at the testing temperature T_{p}=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
Keywords
EN
Publisher

Year
Volume
125
Issue
6
Pages
1392-1396
Physical description
Dates
published
2014-06
Contributors
author
  • Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
author
  • Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n637kz
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