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2014 | 125 | 6 | 1392-1396
Article title

Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant

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The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of Ne^{+} ions (D=1.5 × 10^{14} cm^{-2}, E=100 keV). On the basis of results obtained for samples annealed at the temperature T_{a}=598 K and measured at the testing temperature T_{p}=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
  • Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
  • Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
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