Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments

• Authors: V. Andreev , G. Bondarenko , V. Maslovsky , A. Stolyarov
• Languages of publication: EN

Abstracts

EN

The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric SiO_2-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the SiO_2 film and Si-SiO_2 interface.

Keywords

EN

73.40.Qv; 73.40.Gk

Discipline

• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 6
• Pages: 1371-1374

Dates

published

2014-06

Contributors

author

V. Andreev

• Bauman Moscow State Technical University, Kaluga Branch, 2, Bazhenov Str., Kaluga, 248600, Russia

author

G. Bondarenko

• National Research University Higher School of Economics, 20, Myasnitskaya Ulitsa, Moscow 101000, Russia

author

V. Maslovsky

• The State Unitary Enterprise of a City of Moscow Research-and-Production Centre "SPURT" Zelenograd, 4, West of the 1st proezd, 124460, Russia

author

A. Stolyarov

• Bauman Moscow State Technical University, Kaluga Branch, 2, Bazhenov Str., Kaluga, 248600, Russia

References

• [1] S. Lombardo, J.H. Stathis, P. Linder, K.L. Pey, F. Palumbo, C.H. Tung, J. Appl. Phys. 98, 121301 (2005), doi: 10.1063/1.2147714
• [2] V.V. Afanas'ev, A. Stesmans, J. Appl. Phys. 102, 081301 (2007), doi: 10.1063/1.2799091
• [3] V.A. Gritsenko, Physics-Uspekhi 52, 869 (2009), doi: 10.3367/UFNe.0179.200909a.0921
• [4] V.V. Andreev, G.G. Bondarenko, V.M. Maslovsky, A.A. Stolyarov, IOP Conf. Series: Mater. Sci. Eng. 41, 012017 (2012), doi: 10.1088/1757-899X/41/1/012017
• [5] G.G. Bondarenko, V.V. Andreev, V.M. Maslovsky, A.A. Stolyarov, V.E. Drach, Thin Solid Films 427, 377 (2003), doi: 10.1016/S0040-6090(02)01146-X
• [6] G.G. Bondarenko, V.V. Andreev, V.E. Drach, S.A. Loskutov, M.A. Stolyarov, Thin Solid Films 515, 670 (2006), doi: 10.1016/j.tsf.2005.12.236
• [7] United States Military Standard MIL-STD-883H Method 1019.8 http://en.wikipedia.org/wiki/United_States_Military_Standard

Identifiers

DOI

10.12693/APhysPolA.125.1371