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2014 | 125 | 6 | 1371-1374
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Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments

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The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric SiO_2-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the SiO_2 film and Si-SiO_2 interface.
  • Bauman Moscow State Technical University, Kaluga Branch, 2, Bazhenov Str., Kaluga, 248600, Russia
  • National Research University Higher School of Economics, 20, Myasnitskaya Ulitsa, Moscow 101000, Russia
  • The State Unitary Enterprise of a City of Moscow Research-and-Production Centre "SPURT" Zelenograd, 4, West of the 1st proezd, 124460, Russia
  • Bauman Moscow State Technical University, Kaluga Branch, 2, Bazhenov Str., Kaluga, 248600, Russia
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