Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface

• Authors: N. Frantskevich , A. Fedotov , A. Frantskevich , N. Mazanik
• Languages of publication: EN

Abstracts

EN

The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 cm^{-1} corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of this line when the irradiation time is increasing, with subsequent appearance of lines at ≈ 3621 and ≈ 3698 cm^{-1} and simultaneous disappearance of 4158 cm^{-1} line. No such effect was observed when the laser beam was focused on defect-free regions. The experiments have shown that heat treatment of the samples studied causes the appearance in the Raman spectra of lines at ≈ 3468, ≈ 3621, and ≈ 3812 cm^{-1}, which can be associated with molecular hydrogen.

Keywords

EN

78.30.Am; 61.72.uf

Discipline

• 78.30.Am: Elemental semiconductors and insulators
• 61.72.uf: Ge and Si

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 6
• Pages: 1332-1334

Dates

published

2014-06

Contributors

author

N. Frantskevich

• Belarusian National Technical University, Minsk, 220063, Belarus

author

A. Fedotov

• Belarusian State University, Minsk, 220030, Belarus

author

A. Frantskevich

• Belarusian National Technical University, Minsk, 220063, Belarus

author

N. Mazanik

• Belarusian State Technological University, Minsk, 220006, Belarus

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Identifiers

DOI

10.12693/APhysPolA.125.1332