Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

• Authors: F. Komarov , L. Vlasukova , O. Milchanin , M. Greben , I. Parkhomenko , A. Mudryi , E. Wendler , P. Zukowski
• Languages of publication: EN

Abstracts

EN

Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.

Keywords

EN

61.80.-x; 61.72.Ff; 63.20.-e; 78.66.-w

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)
• 63.20.-e: Phonons in crystal lattices(for phonons in superconductors, see 74.25.Kc; see also 43.35.Gk Phonons in crystal lattice, quantum acoustics—in Acoustics Appendix)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 6
• Pages: 1288-1292

Dates

published

2014-06

Contributors

author

F. Komarov

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

L. Vlasukova

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

O. Milchanin

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

M. Greben

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

I. Parkhomenko

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

A. Mudryi

• Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus P. Brovki Str. 17, 220072 Minsk, Belarus

author

E. Wendler

• Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

author

P. Zukowski

• Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

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Identifiers

DOI

10.12693/APhysPolA.125.1288