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2014 | 125 | 6 | 1288-1292
Article title

Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

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EN
Abstracts
EN
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
Keywords
Contributors
author
  • Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
  • Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
  • Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
  • Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
  • Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
  • Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus P. Brovki Str. 17, 220072 Minsk, Belarus
author
  • Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
author
  • Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n609kz
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