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Abstracts
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
Discipline
- 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
- 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
- 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)
- 63.20.-e: Phonons in crystal lattices(for phonons in superconductors, see 74.25.Kc; see also 43.35.Gk Phonons in crystal lattice, quantum acoustics—in Acoustics Appendix)
Journal
Year
Volume
Issue
Pages
1288-1292
Physical description
Dates
published
2014-06
Contributors
author
- Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
- Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
- Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
- Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
- Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
author
- Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus P. Brovki Str. 17, 220072 Minsk, Belarus
author
- Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
author
- Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n609kz