Desorption Activation Energy of SiBr_2 Molecules according to Steady-State Approximation

• Authors: R. Knizikevičius
• Languages of publication: EN

Abstracts

EN

The chemical etching of intrinsic and n-type polycrystalline silicon in Br_2 ambient is considered. The theoretically calculated dependences of silicon etching rates on pressure of Br_2 molecules at different temperatures are compared with experimentally measured ones. The reaction and desorption activation energies are evaluated. It is found that activation energy of Si + Br_2 → SiBr_2 reaction for intrinsic silicon is equal to (1.82 ± 0.24) eV, and decreases to (1.45 ± 0.24) eV when n-type silicon films are used. Desorption activation energy of SiBr_2 molecules for intrinsic silicon is equal to (1.94 ± 0.17) eV, and decreases to (1.51 ± 0.17) eV when n-type silicon films are used. Desorption of SiBr_2 molecules is an etching-rate limiting process at high pressure of Br_2 molecules.

Keywords

EN

81.65.Cf; 82.20.Db; 82.20.Pm

Discipline

• 82.20.Db: Transition state theory and statistical theories of rate constants
• 82.20.Pm: Rate constants, reaction cross sections, and activation energies
• 81.65.Cf: Surface cleaning, etching, patterning(see also 52.77.Bn Etching and cleaning in physics of plasmas)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 5
• Pages: 1240-1243

Dates

published

2014-05

received

2013-10-05

(unknown)

2014-03-11

Contributors

author

R. Knizikevičius

• Department of Physics, Kaunas University of Technology, 73 K. Donelaičio St., LT-44029 Kaunas, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.125.1240