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2014 | 125 | 5 | 1240-1243
Article title

Desorption Activation Energy of SiBr_2 Molecules according to Steady-State Approximation

Content
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Languages of publication
EN
Abstracts
EN
The chemical etching of intrinsic and n-type polycrystalline silicon in Br_2 ambient is considered. The theoretically calculated dependences of silicon etching rates on pressure of Br_2 molecules at different temperatures are compared with experimentally measured ones. The reaction and desorption activation energies are evaluated. It is found that activation energy of Si + Br_2 → SiBr_2 reaction for intrinsic silicon is equal to (1.82 ± 0.24) eV, and decreases to (1.45 ± 0.24) eV when n-type silicon films are used. Desorption activation energy of SiBr_2 molecules for intrinsic silicon is equal to (1.94 ± 0.17) eV, and decreases to (1.51 ± 0.17) eV when n-type silicon films are used. Desorption of SiBr_2 molecules is an etching-rate limiting process at high pressure of Br_2 molecules.
Keywords
EN
Contributors
  • Department of Physics, Kaunas University of Technology, 73 K. Donelaičio St., LT-44029 Kaunas, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n532kz
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