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2014 | 125 | 5 | 1191-1196
Article title

Electrical Characterization of Al/Ta_2O_5/Al Structures Grown by Electron Beam Deposition

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EN
We report study of current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of Al/Ta_2O_5/Al metal-insulator-metal structures prepared by electron beam deposition. At low bias voltages the J-V characteristics of Al/Ta_2O_5/Al structures show ohmic conduction. At higher voltages the conductivity becomes limited by space charge. The space charge limited conductivity is due to carrier trap centers located within the energy gap of Ta_2O_5. The distribution of the trap appears to be exponential above the valence band. Basing on the comparison of the measured temperature dependences of the current density with the theoretical model one can determine important material parameters, such as the trap density. The density of states at the Fermi level N(E_{F}) for the Ta_2O_5 film is found to be 2.75 × 10^{19} eV^{-1} cm^{-3}. The capacitance-voltage-temperature (C-V-T) characteristics of Al/Ta_2O_5/Al structures were carried out in the bias range -5 to +5 V and at temperatures from 300 to 550 K. The capacitance of Al/Ta_2O_5/Al structures increases with the increasing temperature.
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author
  • Department of Physics, Center of Excellent for Advanced Materials Research, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
  • Nano-Science & Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University Roxy, Cairo, Egypt
author
  • Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt
References
  • [1] S. Ezhilvalavan, T.Y. Tseng, J. Mater. Sci. Mater. Electron. 10, 9 (1999), doi: 10.1023/A:1008970922635
  • [2] S.V. Jagadeesh Chandra, S. Uthanna, G. Mohan Rao, Appl. Surf. Sci. 254, 1953 (2008), doi: 10.1016/j.apsusc.2007.08.005
  • [3] Y.S. Shin, J.Y. Kim, C.M. Wang, J.F. Bonnet, K. Scott Weil, Surf. Sci. 603, 2290 (2009), doi: 10.1016/j.susc.2009.05.006
  • [4] M. Stromme Mattsson, G.A. Niklasson, J. Appl. Phys. 85, 8199 (1999), doi: 10.1063/1.370694
  • [5] C.G. Granqvist, Handbook of Inorganic Electrochromic Materials, Elsevier, Amsterdam 1995, p. 408, doi: 10.1002/adma.19960080825
  • [6] J.Y. Zhang, I.W. Boyd, Appl. Surf. Sci. 168, 234 (2000), doi: 10.1016/S0169-4332(00)00605-X
  • [7] J.Y. Zhang, B. Lim, V. Dusastre, I.W. Boyd, Appl. Phys. Lett. 73, 2299 (1998), doi: 10.1063/1.121803
  • [8] J.Y. Zhang, I.W. Boyd, Appl. Phys. A 70, 1 (2000), doi: 10.1007/s003390051050
  • [9] W.H. Cheng, S.F. Chi, A.K. Chu, Thin Solid Films 347, 233 (1999), doi: 10.1016/S0040-6090(99)00019-X
  • [10] H. Takahashi, S. Suzuki, I. Nishi, J. Lightwave Technol. 12, 989 (1994), doi: 10.1109/50.296189
  • [11] H. Terui, M. Kobayashi, Appl. Phys. Lett. 32, 666 (1978), doi: 10.1063/1.89848
  • [12] H. Shinriki, M. Nakata, IEEE Trans. Electron Dev. 38, 455 (1991), doi: 10.1109/16.75185
  • [13] F. Rubio, J.M. Albella, J.M. Martinz-Duart, Thin Solid Films 90, 405 (1981), doi: 10.1016/0040-6090(82)90545-4
  • [14] Y.K. Tu, C.C. Lin, W.S. Wang, S.L. Huang, Proc. SPIE 836, 40 (1987)
  • [15] W.C. Herrmann, J. Vac. Sci. Technol. 18, 1303 (1981), doi: 10.1116/1.570921
  • [16] M.A. Mohammad, D.V. Morgan, Phys. State A 115, 213 (1989), doi: 10.1002/pssa.2211150123
  • [17] Yi-Hao Pai, Chih-Cheng Chou, Fuh-Sheng Shieu, Mater. Chem. Phys. 107, 524 (2008), doi: 10.1016/j.matchemphys.2007.08.032
  • [18] O.A. Azim, M.M. Abdel-Aziz, I.S. Yahia, Appl. Surf. Sci. 255, 4829 (2009), doi: 10.1016/j.apsusc.2008.11.084
  • [19] O.S. Panwar, S.K. Gupta, M. Alim Khan, B.S. Satyanarayana, R. Bhattacharyya, Diam. Relat. Mater. 13, 513 (2004), doi: 10.1016/j.diamond.2003.12.011
  • [20] K.D. McKenzie, P.G. Le Comber, W.E. Spear, Philos. Mag. B 46, 377 (1982), doi: 10.1080/13642818208246448
  • [21] M.A. Lampert, P. Mark, Current Injection in Solids, Academic, New York 1970
  • [22] A.M.A. Barry, Physica B 396, 49 (2007), doi: 10.1016/j.physb.2007.03.004
  • [23] M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press, New York 1970
  • [24] F. Yakuphanoglu, N. Tugluoglu, S. Karadeniz, Physica B 392, 188 (2007), doi: 10.1016/j.physb.2006.11.018
  • [25] R.D. Gould, J. Appl. Phys. 53, 3353 (1982), doi: 10.1063/1.331003
  • [26] V.S. Kushwaha, A. Kunar, J. Mater. Sci. 42, 2712 (2007), doi: 10.1007/s10853-006-1407-7
  • [27] V.S. Kushwaha, A. Kunar, Mater. Lett. 60, 2148 (2006), doi: 10.1016/j.matlet.2005.12.090
  • [28] http://www.ece.utep.edu/courses/ee3329/ee3329/Studyguide/ToC/Fundamentals/Carriers/explain.html
  • [29] PV-2000-4, Eds. K.R. Hebert, R.S. Lillard, B.R. MacDougall, The Electrochemical Society, Pennington, NJ 2000
  • [30] H. Hu, C. Zhu, Y.F. Lu, M.F. Li, B.J. Cho, W.K. Choi, IEEE Electron Dev. Lett. 23, 514 (2002), doi: 10.1109/LED.2002.802602
  • [31] M.A. Green, J. Shewchun, J. Appl. Phys. 46, 51 (1975), doi: 10.1063/1.321583
  • [32] D.E. Yıldız, S. Altındal, Microelectron. Eng. 85, 289 (2008), doi: 10.1016/j.mee.2007.06.015
  • [33] Z.T. Song, N. Chong, H.L.W. Chan, C.L. Choy, Appl. Phys. Lett. 79, 668 (2001), doi: 10.1063/1.1387265
  • [34] V. Fouad-Hanna, Electron. Lett. 16, 604 (1980), doi: 10.1049/el:19800419
  • [35] C. Veyres, V. Fouad-Hanna, Int. J. Electron. 48, 47 (1980), doi: 10.1080/00207218008901066
  • [36] B.M. Xu, R.G. Polcawich, S. Trolier-Mckinstry, Y.H. Ye, L.E. Cross, J.J. Bernstein, R. Miller, Appl. Phys. Lett. 75, 4180 (1999), doi: 10.1063/1.125575
  • [37] M.A. Majeed Khan, M. Zulfequar, M. Husain, Physica B 366, 1 (2005), doi: 10.1016/j.physb.2005.04.006
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bwmeta1.element.bwnjournal-article-appv125n523kz
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