Electrical Characterization of Al/Ta_2O_5/Al Structures Grown by Electron Beam Deposition

• Authors: I. Yahia , A. Farag
• Languages of publication: EN

Abstracts

EN

We report study of current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of Al/Ta_2O_5/Al metal-insulator-metal structures prepared by electron beam deposition. At low bias voltages the J-V characteristics of Al/Ta_2O_5/Al structures show ohmic conduction. At higher voltages the conductivity becomes limited by space charge. The space charge limited conductivity is due to carrier trap centers located within the energy gap of Ta_2O_5. The distribution of the trap appears to be exponential above the valence band. Basing on the comparison of the measured temperature dependences of the current density with the theoretical model one can determine important material parameters, such as the trap density. The density of states at the Fermi level N(E_{F}) for the Ta_2O_5 film is found to be 2.75 × 10^{19} eV^{-1} cm^{-3}. The capacitance-voltage-temperature (C-V-T) characteristics of Al/Ta_2O_5/Al structures were carried out in the bias range -5 to +5 V and at temperatures from 300 to 550 K. The capacitance of Al/Ta_2O_5/Al structures increases with the increasing temperature.

Keywords

EN

77.84.Bw; 77.55.-g; 81.10.Bk; 85.30.Kk; 85.30.-z

Discipline

• 81.10.Bk: Growth from vapor
• 85.30.Kk: Junction diodes
• 77.84.Bw: Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 77.55.-g: Dielectric thin films(see also 85.50.-n Dielectric, ferroelectric, and piezoelectric devices; for microelectronics applications, see 85.40.-e; for methods of film deposition, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 5
• Pages: 1191-1196

Dates

published

2014-05

received

2013-04-28

(unknown)

2014-02-20

Contributors

author

I. Yahia

• Department of Physics, Center of Excellent for Advanced Materials Research, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
• Nano-Science & Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University Roxy, Cairo, Egypt

author

A. Farag

• Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt

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Identifiers

DOI

10.12693/APhysPolA.125.1191