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2014 | 125 | 5 | 1191-1196

Article title

Electrical Characterization of Al/Ta_2O_5/Al Structures Grown by Electron Beam Deposition

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Abstracts

EN
We report study of current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of Al/Ta_2O_5/Al metal-insulator-metal structures prepared by electron beam deposition. At low bias voltages the J-V characteristics of Al/Ta_2O_5/Al structures show ohmic conduction. At higher voltages the conductivity becomes limited by space charge. The space charge limited conductivity is due to carrier trap centers located within the energy gap of Ta_2O_5. The distribution of the trap appears to be exponential above the valence band. Basing on the comparison of the measured temperature dependences of the current density with the theoretical model one can determine important material parameters, such as the trap density. The density of states at the Fermi level N(E_{F}) for the Ta_2O_5 film is found to be 2.75 × 10^{19} eV^{-1} cm^{-3}. The capacitance-voltage-temperature (C-V-T) characteristics of Al/Ta_2O_5/Al structures were carried out in the bias range -5 to +5 V and at temperatures from 300 to 550 K. The capacitance of Al/Ta_2O_5/Al structures increases with the increasing temperature.

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Contributors

author
  • Department of Physics, Center of Excellent for Advanced Materials Research, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
  • Nano-Science & Semiconductor Labs., Physics Department, Faculty of Education, Ain Shams University Roxy, Cairo, Egypt
author
  • Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt

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Publication order reference

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bwmeta1.element.bwnjournal-article-appv125n523kz
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