PL EN


Preferences help
enabled [disable] Abstract
Number of results
2014 | 125 | 5 | 1144-1148
Article title

Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition

Content
Title variants
Languages of publication
EN
Abstracts
EN
Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
Keywords
Contributors
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
References
  • [1] B. O'Regan, M. Grätzel, Nature 353, 737 (1991), doi: 10.1038/353737a0
  • [2] H. Cheng, W. Chiu, C. Lee, S. Tsai, W. Hsieh, J. Phys. Chem. C 112, 16359 (2008), doi: 10.1021/jp805239k
  • [3] X.D. Wang, Y. Ding, C.J. Summers, Z.L. Wang, J. Phys. Chem. B 108, 8773 (2004), doi: 10.1021/jp048482e
  • [4] S.-H. Ko, D. Lee, H.-W. Kang, K.-H. Nam, J.-Y. Yeo, S.-J. Hong, C.P. Grigoropoulos, H.-J. Sung, Nano Lett. 11, 666 (2011), doi: 10.1021/nl1037962
  • [5] M.A. Borysiewicz, E. Dynowska, V. Kolkovsky, J. Dyczewski, M. Wielgus, E. Kamińska, A. Piotrowska, Phys. Status Solidi A 209, 2463 (2012), doi: 10.1002/pssa.201228041
  • [6] J.-E. Sundgren, B.-O. Johansson, H.T.G. Hentzell, S.-E. Karlsson, Thin Solid Films 105, 385 (1983), doi: 10.1016/0040-6090(83)90320-6
  • [7] S. Gangopadhyay, R. Acharya, A.K. Chattopadhyay, S. Paul, Vacuum 84, 843 (2010), doi: 10.1016/j.vacuum.2009.11.010
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n513kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.