Mapping of Copper Oxidation State Using High Pressure X-Ray Photoelectron Spectroscopy

• Authors: J. Kowalska , C. Gopinath
• Languages of publication: EN

Abstracts

EN

The interaction of O_2 with polycrystalline foil of Cu, from ultra high vacuum to 1 mbar and up to 773 K has been investigated. The study were performed by using the high pressure X-ray photoelectron spectroscopy (electron spectroscopy for chemical analysis) ultraviolet photoelectron spectroscopy system. In this work the results of mapping copper oxidation states as a function of temperature at 1 mbar O_2 have been presented.

Keywords

EN

07.05.Tp; 85.60.Gz; 73.40.-c; 78.66.-w

Discipline

• 73.40.-c: Electronic transport in interface structures
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 85.60.Gz: Photodetectors (including infrared and CCD detectors)(for superconducting infrared detectors, see 85.25.Pb; for superconducting optical, x-ray and γ-ray detectors, see 85.25.Oj; see also 07.57.Kp in instruments)
• 07.05.Tp: Computer modeling and simulation

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1065-1066

Dates

published

2014-04

Contributors

author

J. Kowalska

• PREVAC sp. z o.o., Raciborska 61, 44-362 Rogów, Poland

author

C. Gopinath

• Catalysis Division and Center of Excellence on Surface Science, CSIR-National Chemical Laboratory Pune 411 008, India

References

• [1] Kanak Roy, C.P. Vinod, Chinnakonda S. Gopinath, J. Phys. Chem. C 117, 4717 (2013), doi: 10.1021/jp312706s

Identifiers

DOI

10.12693/APhysPolA.125.1065