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2014 | 125 | 4 | 1042-1048
Article title

Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC

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EN
Abstracts
EN
A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the Z_{1/2} center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.
Keywords
EN
Contributors
author
  • Military University of Technology, S. Kaliskiego 2, 00-908 Warszawa, Poland
  • Maria Skłodowska-Curie Warsaw Academy, Łabiszyńska 25, 03-204 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Military University of Technology, S. Kaliskiego 2, 00-908 Warszawa, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n472kz
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