Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC

• Authors: M. Suproniuk , P. Kamiński , R. Kozłowski , M. Pawłowski
• Languages of publication: EN

Abstracts

EN

A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the Z_{1/2} center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.

Keywords

EN

72.40.+w; 71.55.-i; 72.20.-i

Discipline

• 72.20.-i: Conductivity phenomena in semiconductors and insulators(see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves)
• 71.55.-i: Impurity and defect levels
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1042-1048

Dates

published

2014-04

Contributors

author

M. Suproniuk

• Military University of Technology, S. Kaliskiego 2, 00-908 Warszawa, Poland
• Maria Skłodowska-Curie Warsaw Academy, Łabiszyńska 25, 03-204 Warszawa, Poland

author

P. Kamiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

R. Kozłowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

M. Pawłowski

• Military University of Technology, S. Kaliskiego 2, 00-908 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.125.1042