Defect Analysis of Pentacene Diode

• Authors: L. Stuchlíková , M. Weis , P. Juhász , A. Kósa , L. Harmatha , J. Jakabovic
• Languages of publication: EN

Abstracts

EN

This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 × 10^{-18} cm^2 at 0.34 eV, 3.1 × 10^{-17} cm^2 at 0.41 eV, and 2.9 × 10^{-15} cm^2 at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.

Keywords

EN

72.80.Le; 73.50.Gr; 71.55.-i

Discipline

• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths
• 72.80.Le: Polymers; organic compounds (including organic semiconductors)
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1038-1041

Dates

published

2014-04

Contributors

author

L. Stuchlíková

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

M. Weis

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

P. Juhász

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

A. Kósa

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

L. Harmatha

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

J. Jakabovic

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

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Identifiers

DOI

10.12693/APhysPolA.125.1038