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This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 × 10^{-18} cm^2 at 0.34 eV, 3.1 × 10^{-17} cm^2 at 0.41 eV, and 2.9 × 10^{-15} cm^2 at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.
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1038-1041
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published
2014-04
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author
- Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
author
- Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
author
- Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
author
- Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
author
- Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
author
- Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
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bwmeta1.element.bwnjournal-article-appv125n471kz