Defect Analysis of Pentacene Diode

• Authors: L. Stuchlíková , M. Weis , P. Juhász , A. Kósa , L. Harmatha , J. Jakabovic
• Languages of publication: EN

Abstracts

EN

This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 × 10^{-18} cm^2 at 0.34 eV, 3.1 × 10^{-17} cm^2 at 0.41 eV, and 2.9 × 10^{-15} cm^2 at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.

Keywords

EN

72.80.Le; 73.50.Gr; 71.55.-i

Discipline

• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths
• 72.80.Le: Polymers; organic compounds (including organic semiconductors)
• 71.55.-i: Impurity and defect levels

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1038-1041

Dates

published

2014-04

Contributors

author

L. Stuchlíková

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

M. Weis

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

P. Juhász

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

A. Kósa

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

L. Harmatha

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

author

J. Jakabovic

• Slovak University of Technology in Bratislava, Faculty of Electrical Engineering and Information Technology Institute of Electronics and Photonics, Ilkovičova 3, 812 19 Bratislava, Slovak Republic

References

• [1] H.E. Katz, J. Mater. Chem. 7, 369 (1997), doi: 10.1039/a605274f
• [2] H.E. Katz, Chem. Mater. 16, 4748 (2004), doi: 10.1021/cm049781j
• [3] H. Sirringhaus, Adv. Mater. 17, 2411 (2005), doi: 10.1002/adma.200501152
• [4] M. Mas-Torrent, C. Rovira, Chem. Soc. Rev. 37, 827 (2008), doi: 10.1039/b614393h
• [5] N. Karl, Synth. Met. 133-134, 649 (2003), doi: 10.1016/S0379-6779(02)00398-3
• [6] V. Coropceanu, J. Cornil, D.A. de Silva, Y. Olivier, R. Silbey, J.-L. Brédas, Chem. Rev. 107, 926 (2007), doi: 10.1021/cr050140x
• [7] G. Horowitz, in: Organic Electronics, Ed. H. Klauk, Wiley-VCH, Weinheim 2006, doi: 10.1002/adma.19900020604
• [8] T. Manaka, F. Liu, M. Weis, M. Iwamoto, J. Appl. Phys. 107, 043712 (2010), doi: 10.1063/1.3285503
• [9] D.V. Lang, J. Appl. Phys. 45, 3023 (1974), doi: 10.1063/1.1663719
• [10] A.J. Campbell, D.D.C. Bradley, E. Werner, W. Brütting, Synth. Met. 111-112, 273 (2000), doi: 10.1016/S0379-6779(99)00446-4
• [11] Y.S. Yang, S.H. Kim, J.-I. Lee, H.Y. Chu, L.-M. Do, H. Lee, J. Oh, T. Zyung, Appl. Phys. Lett. 80, 1595 (2002), doi: 10.1063/1.1459117
• [12] S. Neugebauer, J. Rauh, C. Deibel, V. Dyakonov, Appl. Phys. Lett. 100, 263304 (2012), doi: 10.1063/1.4731637
• [13] T.P. Nguyen, C. Renaud, P. Le Rendu, S.H. Yang, Phys. Status Solidi C 6, 1856 (2009), doi: 10.1002/pssc.200881458
• [14] J.E. Northrup, M.L. Chabinyc, Phys. Rev. B 68, 041202 (2003), doi: 10.1103/PhysRevB.68.041202
• [15] K.P. Pernstich, D. Oberhoff, C. Goldmann, B. Batlogg, Appl. Phys. Lett. 89, 213509 (2006), doi: 10.1063/1.2396924
• [16] D. Oberhoff, K.P. Pernstich, D.J. Gundalch, B. Batlogg, IEEE Trans. Electron. Dev. 54, 17 (2007), doi: 10.1109/TED.2006.887200
• [17] S. Weiss, R. Kassing, Solid-State Electron. 31, 1733 (1988), doi: 10.1016/0038-1101(88)90071-8
• [18] R. Bayer, H. Burghardt, E. Thomas, R. Reich, D.R.T. Zahn, T. Gessner, Microelectron. Reliab. 39, 297 (1999), doi: 10.1016/S0026-2714(98)00235-2
• [19] T. Yasuda, T. Goto, K. Fujita, T. Tsutsui, Appl. Phys. Lett. 85, 2098 (2004), doi: 10.1063/1.1794375
• [20] D.R. Lide, CRC Handbook of Chemistry and Physics, 84th ed., CRC Press, 2003
• [21] K. Hummer, C. Ambrosh-Draxl, Phys. Rev. B 72, 205205 (2005), doi: 10.1103/PhysRevB.72.205205
• [22] H. Yoshida, N. Sato, Phys. Rev. B 77, 235205 (2008), doi: 10.1103/PhysRevB.77.235205
• [23] G.A. de Wijs, C.C. Mattheus, R.A. de Groot, T.T.M. Palstra, Synth. Met. 139, 109 (2003), doi: 10.1016/S0379-6779(03)00020-1

Identifiers

DOI

10.12693/APhysPolA.125.1038