Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO_2/n-Type 4H-SiC Interface

• Authors: K. Król , M. Sochacki , J. Szmidt
• Languages of publication: EN

Abstracts

EN

Silicon carbide (SiC) is the only wide-bandgap semiconductor capable of forming native dielectric layer of SiO_2 by thermal oxidation. This unique property of SiC combined with its high thermal conductivity and high critical field makes this semiconductor material suitable for high power electronic devices. Unfortunately, the state-of-the art technology does not use the full benefits of the material, especially in the case of MOSFET transistors. This is caused by insufficient electrical parameters of SiO_2/SiC interface. Two-component structure of the material and its high density result in high level of interface traps reducing the surface mobility and thus increasing series resistance of the device. One of the proposed methods of reducing the trap density in SiC MOS structure is a shallow nitrogen implantation prior to oxidation. This technique is based on the observation that introducing nitrogen into the SiO_2/SiC system results in significant reduction of trap states density and increase of the channel effective mobility. The shallow implantation technique has been reported to be as much effective as nitric oxide annealing which is one of the most effective techniques for oxide quality improvement in case of SiC. Unlike the diffusion based techniques, like postoxidation annealing, implantation of the nitrogen prior oxidation has the possibility of nitrogen concentration control near the oxide interface during oxidation process itself. This property is important since it was shown that the improvement degree is directly proportional to amount of nitrogen built in the vicinity of SiO_2/SiC interface during oxidation. However, previous investigations about this technique were inconclusive about the influence of implantation parameters and process conditions on observed effects. Both improvement and deterioration of interface quality was observed by different researchers. This behavior was never explained clearly. The primary objective of this research is to analyze the impact of implantation conditions on electrical properties of SiO_2/SiC MOS structure. This analysis is used to evaluate a hypothetical description of physical phenomena during oxidation of shallowly implanted substrates.

Keywords

EN

73.40.Qv; 68.55.ag; 72.20.-i; 72.25.-b

Discipline

• 72.25.-b: Spin polarized transport(for spin polarized transport devices, see 85.75.-d)
• 68.55.ag: Semiconductors
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 72.20.-i: Conductivity phenomena in semiconductors and insulators(see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1033-1037

Dates

published

2014-04

Contributors

author

K. Król

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland
• Tele- and Radio Research Institute, Ratuszowa 11, 03-450 Warszawa, Poland

author

M. Sochacki

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

author

J. Szmidt

• Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.125.1033