Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

• Authors: H. Matsuura , T. Morine , S. Nagamachi
• Languages of publication: EN

Abstracts

EN

Because Al and B (elements of group III) in SiC are acceptors with deep energy levels and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (an element of group II) that may emit two holes into the valence band is investigated. Annealing at 1800C makes a Mg-implanted layer p-type. It is found that an Mg acceptor level in 4H-SiC is too deep to reliably determine the density and energy level of the Mg acceptor using the frequently used occupation probability, i.e., the Fermi-Dirac distribution function. Using the distribution function that accounts for the influence of the excited states of a deep-level acceptor, the density and energy level of Mg acceptors can be determined to be approximately 1 × 10^{19} cm^{-3} and 0.6 eV, respectively. These values are considered to be reliable because they agree well with the Mg implantation condition.

Keywords

EN

71.55.-i; 73.61.Le

Discipline

• 73.61.Le: Other inorganic semiconductors
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1017-1020

Dates

published

2014-04

Contributors

author

H. Matsuura

• Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan

author

T. Morine

• Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan

author

S. Nagamachi

• Nagamachi Science Laboratory Co., Ltd., 1-16-1-1003 Shioe, Amagasaki, Hyogo 661-0976, Japan

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Identifiers

DOI

10.12693/APhysPolA.125.1017