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2014 | 125 | 4 | 1017-1020
Article title

Electrical Behavior of Mg in Mg-Implanted 4H-SiC Layer

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EN
Abstracts
EN
Because Al and B (elements of group III) in SiC are acceptors with deep energy levels and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (an element of group II) that may emit two holes into the valence band is investigated. Annealing at 1800C makes a Mg-implanted layer p-type. It is found that an Mg acceptor level in 4H-SiC is too deep to reliably determine the density and energy level of the Mg acceptor using the frequently used occupation probability, i.e., the Fermi-Dirac distribution function. Using the distribution function that accounts for the influence of the excited states of a deep-level acceptor, the density and energy level of Mg acceptors can be determined to be approximately 1 × 10^{19} cm^{-3} and 0.6 eV, respectively. These values are considered to be reliable because they agree well with the Mg implantation condition.
Keywords
EN
Publisher

Year
Volume
125
Issue
4
Pages
1017-1020
Physical description
Dates
published
2014-04
Contributors
author
  • Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
author
  • Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
author
  • Nagamachi Science Laboratory Co., Ltd., 1-16-1-1003 Shioe, Amagasaki, Hyogo 661-0976, Japan
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n466kz
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