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Number of results
2014 | 125 | 4 | 1010-1012

Article title

Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers

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EN

Abstracts

EN
We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of ^{16}O¯. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.

Keywords

Contributors

author
  • Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
  • Meiji University, Kawasaki 214-8571, Japan
author
  • Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
  • Meiji University, Kawasaki 214-8571, Japan
author
  • Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
  • Meiji University, Kawasaki 214-8571, Japan
author
  • Nippon Steel & Sumitomo Metal Corporation, Futtsu 293-8511, Japan
author
  • Nippon Steel & Sumikin Technology Co., Ltd, Futtsu 293-8511, Japan
author
  • Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
author
  • Meiji University, Kawasaki 214-8571, Japan

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv125n464kz
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