PL EN


Preferences help
enabled [disable] Abstract
Number of results
2014 | 125 | 4 | 1010-1012
Article title

Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers

Content
Title variants
Languages of publication
EN
Abstracts
EN
We have investigated the correlation between deep-level photoluminescence and the density of small-angle grain boundaries in multicrystalline Si. A deep-level photoluminescence component around 0.87 eV, which we previously ascribed to oxygen precipitates, became lower and higher in the region with high and low density of small-angle grain boundaries, respectively. This can be explained by the differences in the availability of oxygen atoms around respective small-angle grain boundaries. We performed focused ion beam time-of-flight secondary ion mass spectroscopy on special points emitting extremely strong 0.87 eV emission, and detected a clustered area of ^{16}O¯. This is strong evidence for the idea that the 0.87 eV band is due to oxygen precipitates.
Keywords
Contributors
author
  • Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
  • Meiji University, Kawasaki 214-8571, Japan
author
  • Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
  • Meiji University, Kawasaki 214-8571, Japan
author
  • Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
  • Meiji University, Kawasaki 214-8571, Japan
author
  • Nippon Steel & Sumitomo Metal Corporation, Futtsu 293-8511, Japan
author
  • Nippon Steel & Sumikin Technology Co., Ltd, Futtsu 293-8511, Japan
author
  • Institute of Space and Astronautical Science/JAXA, Sagamihara 252-5210, Japan
author
  • Meiji University, Kawasaki 214-8571, Japan
References
  • [1] J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyo, D. Yang, S. Ito, F. Yin, Scr. Mater. 52, 1211 (2005), doi: 10.1016/j.scriptamat.2005.03.010
  • [2] H. Sugimoto, M. Inoue, M. Tajima, A. Ogura, Y. Oshita, Jpn. J. Appl. Phys. 45, L641 (2006), doi: 10.1143/JJAP.45.L641
  • [3] W. Seifert, G. Morgenstern, M. Kittler, Semicond. Sci. Technol. 8, 1687 (1993), doi: 10.1088/0268-1242/8/9/001
  • [4] Y. Ohshita, Y. Nishikawa, M. Tachibana, V.K. Tuong, T. Sasaki, N. Kojima, S. Tanaka, M. Yamaguchi, J. Cryst. Growth 275, e491 (2005), doi: 10.1016/j.jcrysgro.2004.11.111
  • [5] H. Sugimoto, K. Araki, M. Tajima, T. Eguchi, I. Yamaga, M. Dhamrin, K. Kamisako, T. Saitoh, J. Appl. Phys. 102, 054506 (2007), doi: 10.1063/1.2776003
  • [6] T. Trupke, R.A. Bardos, M.D. Abbott, P. Würfel, E. Pink, Y. Augarten, F.W. Chen, K. Fisher, J.E. Cotter, M. Kasemann, M. Rüdiger, S. Kontermann, M.C. Schubert, M. The, S.W. Glunz, W. Warta, D. Macdonald, J. Tan, A. Cuevas, J. Bauer, R. Gupta, O. Breitenstein, T. Buonassisi, G. Tarnowski, A. Lorenz, H.P. Hartmann, D.H. Neuhaus, J.M. Fernandez, in: Proc. 22nd Europ. Photovoltaic Solar Energy Conf., Milan (Italy), 2007, WIP-Renewable Energies, München 2007, p. 22
  • [7] M. Tajima, Y. Iwata, F. Okayama, H. Toyota, H. Onodera, T. Sekiguchi, J. Appl. Phys. 111, 113523 (2012), doi: 10.1063/1.4728194
  • [8] M. Tajima, Z. Li, R. Shimidzu, Jpn. J. Appl. Phys. 41, L1505 (2002), doi: 10.1143/JJAP.41.L1505
  • [9] J.C. Mikkelsen, Jr., in: Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, Eds. J.C. Mikkelsen, Jr., S. Paearton, J.W. Corbett, S.J. Pennycook, Mater. Res. Soc., Pittsburgh 1986, p. 19
  • [10] S. Nakano, X.J. Chen, B. Gao, K. Kakimito, J. Cryst. Growth 318, 280 (2011), doi: 10.1016/j.jcrysgro.2010.11.009
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n464kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.