Effect of Stress on Defect Transformation in B^{+} and Ag^{+} Implanted HgCdTe/CdZnTe Structures

• Authors: R. Savkina , A. Smirnov , A. Gudymenko , V. Kladko , F. Sizov , C. Frigeri
• Languages of publication: EN

Abstracts

EN

The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) Hg_{1-x}Cd_{x}Te (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses (B^{+} and Ag^{+}) leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × 10^3 Pa and 2.2 × 10^5 Pa, respectively). The structural properties of the Hg_{1-x}Cd_{x}Te epilayers were investigated using X-ray high-resolution reciprocal space mapping.

Keywords

EN

61.72.uj; 81.16.Rf

Discipline

• 81.16.Rf: Micro- and nanoscale pattern formation
• 61.72.uj: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 1003-1005

Dates

published

2014-04

Contributors

author

R. Savkina

• V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine

author

A. Smirnov

• V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine

author

A. Gudymenko

• V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine

author

V. Kladko

• V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine

author

F. Sizov

• V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine

author

C. Frigeri

• CNR-IMEM Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy

References

• [1] A. Rogalski, Infrared Detectors, 2nd ed., CRC Press, Boca Raton (FL) 2011
• [2] S. Holander-Gleixner, B.L. Williams, H.G. Robinson, C.R. Helms, J. Electron. Mater. 26, 629 (1997), doi: 10.1007/s11664-997-0207-4
• [3] L. Mollard, G. Destefanis, N. Baier, J. Rothman, P. Ballet, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, G. Bourgeois, J.P. Barnes, C. Pautet, P. Fougeres, J. Electron. Mater. 38, 1805 (2009), doi: 10.1007/s11664-009-0829-9
• [4] H. Ebe, M. Tanaka, Y. Miyamoto, J. Electron. Mater. 28, 854 (1999), doi: 10.1007/s11664-999-0083-1
• [5] T. Kryshtab, R. Savkina, F. Sizov, A. Smirnov, M. Kladkevich, V. Samoylov, Phys. Status Solidi C 9, 1793 (2012), doi: 10.1002/pssc.201100608
• [6] V.B. Lazarev, Physical and Chemical Properties of Semiconductor Substances, Nauka, Moscow 1979 (in Russian)
• [7] Mercury Cadmium Telluride: Growth, Properties and Applications, Eds. P. Capper, J.W. Garland, Wiley, Ltd, London 2011, doi: 10.1002/9780470669464
• [8] A. Smirnov, O. Lytvyn, V. Morozhenko, R. Savkina, M. Smoliy, R. Udovytska, F. Sizov, Ukr. J. Phys. 58, 872 (2013) http://www.ujp.bitp.kiev.ua/files/journals/58/9/580910p.pdf
• [9] R.A. Lidin, L.L. Andreeva, V.A. Molochko, Constants of Inorganic Substances, Begell House, New York 1995

Identifiers

DOI

10.12693/APhysPolA.125.1003