PL EN


Preferences help
enabled [disable] Abstract
Number of results
2014 | 125 | 4 | 1003-1005
Article title

Effect of Stress on Defect Transformation in B^{+} and Ag^{+} Implanted HgCdTe/CdZnTe Structures

Content
Title variants
Languages of publication
EN
Abstracts
EN
The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) Hg_{1-x}Cd_{x}Te (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses (B^{+} and Ag^{+}) leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × 10^3 Pa and 2.2 × 10^5 Pa, respectively). The structural properties of the Hg_{1-x}Cd_{x}Te epilayers were investigated using X-ray high-resolution reciprocal space mapping.
Keywords
EN
Publisher

Year
Volume
125
Issue
4
Pages
1003-1005
Physical description
Dates
published
2014-04
Contributors
author
  • V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine
author
  • V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine
author
  • V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine
author
  • V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine
author
  • V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine
author
  • CNR-IMEM Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy
References
  • [1] A. Rogalski, Infrared Detectors, 2nd ed., CRC Press, Boca Raton (FL) 2011
  • [2] S. Holander-Gleixner, B.L. Williams, H.G. Robinson, C.R. Helms, J. Electron. Mater. 26, 629 (1997), doi: 10.1007/s11664-997-0207-4
  • [3] L. Mollard, G. Destefanis, N. Baier, J. Rothman, P. Ballet, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, G. Bourgeois, J.P. Barnes, C. Pautet, P. Fougeres, J. Electron. Mater. 38, 1805 (2009), doi: 10.1007/s11664-009-0829-9
  • [4] H. Ebe, M. Tanaka, Y. Miyamoto, J. Electron. Mater. 28, 854 (1999), doi: 10.1007/s11664-999-0083-1
  • [5] T. Kryshtab, R. Savkina, F. Sizov, A. Smirnov, M. Kladkevich, V. Samoylov, Phys. Status Solidi C 9, 1793 (2012), doi: 10.1002/pssc.201100608
  • [6] V.B. Lazarev, Physical and Chemical Properties of Semiconductor Substances, Nauka, Moscow 1979 (in Russian)
  • [7] Mercury Cadmium Telluride: Growth, Properties and Applications, Eds. P. Capper, J.W. Garland, Wiley, Ltd, London 2011, doi: 10.1002/9780470669464
  • [8] A. Smirnov, O. Lytvyn, V. Morozhenko, R. Savkina, M. Smoliy, R. Udovytska, F. Sizov, Ukr. J. Phys. 58, 872 (2013) http://www.ujp.bitp.kiev.ua/files/journals/58/9/580910p.pdf
  • [9] R.A. Lidin, L.L. Andreeva, V.A. Molochko, Constants of Inorganic Substances, Begell House, New York 1995
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv125n462kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.