Kelvin Force Microscopy Characterization of Corona Charged Dielectric Surfaces

• Authors: D. Marinskiy , P. Edelman , A. Snider
• Languages of publication: EN

Abstracts

EN

Ionic diffusion of (H_2O)_{n}^{+} and CO¯_3 on SiO_2 surfaces has been quantified using Kelvin force microscopy measurement of ion distribution change after small spot corona charge. For both positive and negative ionic species, the concentration profiles versus time follow the two-dimensional surface diffusion enabling a determination of corresponding diffusion coefficients. On a thermally grown SiO_2 surface, diffusion coefficients of (H_2O)_{n}^{+} and CO¯_3 ions were 2.2 × 10^{-11} cm^2/s and 4.8 × 10^{-12} cm^2/s, respectively. On a chemically cleaned SiO_2 surface, diffusion coefficients of (H_2O)_{n}^{+} and CO¯_3 ions were 7.5 × 10^{-9} cm^2/s and 2.4 × 10^{-9} cm^2/s, respectively. Mathematical analysis of the surface potential decay yields an additional parameter - capacitance equivalent thickness.

Keywords

EN

77.55.-g; 73.61.-r; 68.37.Ps; 73.25.+i

Discipline

• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 68.37.Ps: Atomic force microscopy (AFM)
• 73.25.+i: Surface conductivity and carrier phenomena
• 77.55.-g: Dielectric thin films(see also 85.50.-n Dielectric, ferroelectric, and piezoelectric devices; for microelectronics applications, see 85.40.-e; for methods of film deposition, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 997-1002

Dates

published

2014-04

Contributors

author

D. Marinskiy

• Semilab SDI, 10770N. 46th St., Ste E700, Tampa, FL, USA

author

P. Edelman

• Semilab SDI, 10770N. 46th St., Ste E700, Tampa, FL, USA

author

A. Snider

• University of South Florida, 4202 East Fowler Avenue, Tampa FL, USA

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Identifiers

DOI

10.12693/APhysPolA.125.997