Observation and Control of Interfacial Defects in ZnO/ZnSe Coaxial Nanowires

• Authors: W. Bhutto , Z. Wu , Y. Cao , W. Wang , J. Kang
• Languages of publication: EN

Abstracts

EN

ZnO/ZnSe coaxial nanowires with different ZnO core diameters were synthesized by using a two-step chemical vapor deposition. The scanning electron microscopy images demonstrated that the coaxial nanowires with small ZnO core diameter had the smoother surface than that with large ZnO core diameter. A coherent ZnSe layer with wurtzite structure was observed in the nanowire interface between the ZnO core and the ZnSe shell by high resolution transmission electron microscopy. This coherent layer is beneficial to reduce the defect density and improve the crystal quality by suppressing the phase transition. It was found that the coherent thickness was significantly related to the ZnO core diameter. For the nanowire with large ZnO core, a thin critical thickness of 2 - 3 nm was obtained. As a result, a layer of zinc blende ZnSe appeared outside the nanowire, and a lot of defects existed in the interface between the ZnSe layers with different phase structures. For the nanowire with small ZnO core, however, the critical thickness increased and a coherent coaxial structure was observed with the same lattice spacing in the ZnO core and the ZnSe shell. To obtain defect-free coaxial nanowire, an optimal structure was also proposed by theoretical calculation.

Keywords

EN

62.23.Hj; 61.46.Km; 64.70.Nd; 68.35.Ct

Discipline

• 68.35.Ct: Interface structure and roughness
• 64.70.Nd: Structural transitions in nanoscale materials
• 61.46.Km: Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
• 62.23.Hj: Nanowires

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 125
• Issue: 4
• Pages: 994-996

Dates

published

2014-04

Contributors

author

W. Bhutto

• Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University Ξamen 361005, P.R. China

author

Z. Wu

• Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University Ξamen 361005, P.R. China

author

Y. Cao

• Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University Ξamen 361005, P.R. China

author

W. Wang

• Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University Ξamen 361005, P.R. China

author

J. Kang

• Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University Ξamen 361005, P.R. China

References

• [1] K. Suenaga, C. Colliex, N. Demoncy, A. Loiseau, H. Pascard, F. Willaime, Science 653, 278 (1997), doi: 10.1143/JJAP.38.L755
• [2] Y. Zhang, K. Suenaga, C. Colliex, S. Iijima, Science 281, 973 (1998), doi: 10.1126/science.281.5379.973
• [3] Z.M. Wu, Y. Zhang, J.J. Zheng, X.G. Lin, X.H. Chen, B. Huang, H.Q. Wang, K. Huang, S.P. Li, J.Y. Kang, J. Mater. Chem. 21, 6020 (2011), doi: 10.1039/c0jm03971c
• [4] A.I. Hochbaum, P.D. Yang, Chem. Rev. 110, 527 (2010), doi: 10.1021/cr900075v
• [5] B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, T. Fukui, Nano Lett. 9, 112 (2009), doi: 10.1021/nl802636b
• [6] O. Hayden, A.B. Greytak, D.C. Bell, Adv. Mater. 17, 701 (2005), doi: 10.1002/adma.200401235
• [7] W.J.E. Beek, M.M. Wienk, R.A.J. Janssen, Adv. Mater. 16, 1009 (2004), doi: 10.1002/adma.200306659
• [8] J.J. Zheng, Z.M. Wu, W.H. Yang, S.P. Li, J.Y. Kang, J. Mater. Res. 25, 1272 (2010), doi: 10.1557/jmr.2010.016
• [9] Y. Zhang, J. Pern, A. Mascarenhas, W.L. Zhou, SPIE Newsroom 11, 1388 (2008), doi: 10.1117/2.1200811.1388
• [10] K. Wang, J.J. Chen, W.L. Zhou, Y. Zhang, Y.F. Yan, J. Pern, A. Mascarenhas, Adv. Mater. 20, 3248 (2008), doi: 10.1002/adma.200800145
• [11] H.Y. Chao, J.H. Cheng, J.Y. Lu, Y.H. Chang, C.L. Cheng, Y.F. Chen, Superlatt. Microstruct. 47, 160 (2010), doi: 10.1063/1.3430604
• [12] E. Janik, A. Wachnicka, E. Guziewicz, M. Godlewski, S. Kret, W. Zaleszczyk, E. Dynowska, A. Presz, G. Karczewski, T. Wojtowicz, Nanotechnology 21, 015302 (2010), doi: 10.1088/0957-4484/21/1/015302
• [13] K. Wang, J.J. Chen, Z.M. Zeng, J. Tarr, W.L. Zhou, Y. Zhang, Y.F. Yan, C.S. Jiang, J. Pern, A. Mascarenhas, Appl. Phys. Lett. 96, 123105 (2010), doi: 10.1063/1.3367706
• [14] M.S. Gudiksen, L.J. Lauhon, J. Wang, D.C. Smith, C.M. Lieber, Nature 415, 617 (2002), doi: 10.1038/415617a
• [15] L.J. Lauhon, M.S. Gudiksen, C.M. Lieber, Math. Phys. Eng. Sci. 362, 1247 (2004), doi: 10.1098/rsta.2004.1377
• [16] Y.W. Heo, C. Abernathy, K. Pruessner, W. Sigmund, D.P. Norton, J. Appl. Phys. 96, 3424 (2004), doi: 10.1063/1.1774257
• [17] L. Pan, K.K. Lew, J.M. Redwing, E.C. Dickey, Nano Lett. 5, 1081 (2005), doi: 10.1021/nl050605z
• [18] J. Hsueh, Cryst. Growth 302, 258 (2003), doi: 10.1016/S0022-0248(03)01563-X
• [19] S. Raychaudhuri, E.T. Yu, Appl. Phys. Lett. 99, 114308 (2006), doi: 10.1063/1.2202697
• [20] E.T. Trammell, X. Zhang, Y.L. Li, L.Q. Chen, E.C. Dickey, J. Cryst. Growth 310, 3084 (2008), doi: 10.1016/j.jcrysgro.2008.02.037
• [21] Y.P. Wu, X.H. Zhang, F.C. Xu, L.S. Zheng, J.Y. Kang, Nanotechnology 20, 325709 (2009), doi: 10.1088/0957-4484/20/32/325709

Identifiers

DOI

10.12693/APhysPolA.125.994