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Number of results
2014 | 125 | 4 | 991-993

Article title

Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application

Content

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Languages of publication

EN

Abstracts

EN
We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.

Keywords

EN

Contributors

author
  • MANA Nanoelectronic Materials Unit, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
author
  • MANA Nanoelectronic Materials Unit, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • Graduate School of Pure and Applied Sciences, University of Tsukuba 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
author
  • MANA Nanoelectronic Materials Unit, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
author
  • MANA Nanoelectronic Materials Unit, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
author
  • MANA Nanoelectronic Materials Unit, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • Graduate School of Pure and Applied Sciences, University of Tsukuba 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
author
  • MANA Nanoelectronic Materials Unit, National Institute for Materials Science 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
author
  • School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

References

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  • [6] K. Arafune, E. Ohishi, H. Sai, Y. Ohshita, M. Yamaguchi, J. Cryst. Growth 308, 5 (2007), doi: 10.1016/j.jcrysgro.2007.06.035
  • [7] K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, K. Kakimoto, T. Sekiguchi, Phys. Status Solidi C 10, 141 (2013), doi: 10.1002/pssc.201200884

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv125n459kz
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